Datasheet

1.1 Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
P (W)
F(AV)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
T
=tp/T
tp
I (A)
F(AV)
= 1
= 0.1
= 0.05
= 0.5
= 0.2
δ
δ
δ
δ
δ
δ
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
I (A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 7 5 100 125 150 175
R
th(j-a)
=R
th(j-l)
T
δ
=tp/T
tp
R
th(j-a)
=100°C/W
R
th(j-a)
=120°C/W
SMA
SMB / SMA Flat
R
th(j-a)
=200°C/W
T (°C)
amb
Figure 3. Normalized avalanche power derating versus
junction temperature (T
j
= 125 °C)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
Figure 4. Junction capacitance versus reverse voltage
applied (maximum values)
C(pF)
10
100
1 1 0 100
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
V (V)
R
Figure 5. Relative variation of thermal impedance junction
to ambient versus pulse duration
Z / R
th(j-a) th(j-a)
0.01
0.10
1.00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
SMB
t (s)
p
Figure 6. Relative variation of thermal impedance junction
to ambient versus pulse duration
Z / R
th(j-a) th(j-a)
0.01
0.10
1.00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
SMA
t (s)
p
STPS1H100
Characteristics (curves)
DS1228 - Rev 8
page 3/15