Datasheet

Characteristics STPS1545C
2/10 Doc ID 3503 Rev 7
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.42 x I
F(AV)
+ 0.020 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
Forward rms current 20 A
I
F(AV)
Average forward current δ = 0.5 T
c
= 157 °C Per diode 7.5 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 150 A
I
RRM
Peak repetitive reverse current
t
p
= 2 µs square
F = 1 kHz
1A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 2 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 2700 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
To tal
3.0
1.7
°C/W
R
th(c)
Coupling 0.35
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
=V
RRM
- - 100 µA
T
j
= 125 °C - 5 15 mA
V
F
(1)
Forward voltage drop
T
j
= 125°C I
F
= 7.5A - 0.5 0.57
V T
j
= 25°C I
F
= 15 A --0.84
T
j
= 125 °C I
F
= 15 A - 0.65 0.72
d
Ptot
dTj
-
--------------
1
Rth j a–()
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