Datasheet

Characteristics STPS1150
2/11 Doc ID 9472 Rev 5
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.59 x I
F(AV)
+ 0.08 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 150
V
I
F(RMS)
Forward rms current 15
A
I
F(AV)
Average forward current
STmite/flat T
c
= 160 °C δ = 0.5
1
A
SMA T
L
= 160 °C δ = 0.5
DO-41 T
L
= 150 °C δ = 0.5
I
FSM
Surge non repetitive forward
current
STmite/flat
t
p
= 10 ms sinusoidal
50
A
SMA 50
DO-41 75
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25 °C 1500
W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. condition to avoid runaway for a diode on its own heatsink
d
Ptot
dTj
-
--------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case STmite/STmite flat 20
°C/W
R
th(j-l)
Junction to lead
SMA 20
Lead length = 10 mm DO-41 30
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
0.2 1.0 µA
T
j
= 125 °C 0.2 1.0 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
0.78 0.82
V
T
j
= 125 °C 0.62 0.67
T
j
= 25 °C
I
F
= 2 A
0.85 0.89
T
j
= 125 °C 0.69 0.75
1. t
p
= 5 ms, δ < 2%
2. t
p
= 380 µs, δ < 2%