Datasheet

STPS1045DEE Characteristics
Doc ID 023252 Rev 1 3/8
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature( = 0.5)
P
F(AV)
(W)
0
1
2
3
4
5
6
7
8
9
02468101214
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
T
δ
=tp/T
tp
I
F(AV)
(A)
I
F(AV)
(A)
0
2
4
6
8
10
12
0 25 50 75 100 125 150 175
T
amb
(°C)
T
δ
=tp/T
tp
R
th(j-a)
=R
th(j-c)
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
P(t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
Z
th(j-c)
/R
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t
p
(s)
Figure 5. Reverse leakage current versus
reverse voltage applied(typical
values)
Figure 6. Junction capacitance versus
reverse voltage applied (typical
values)
I
R
(mA)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30 35 40 45
V
R
(V)
T
j
= 150 °C
T
j
= 125 °C
T
j
= 75 °C
T
j
= 50 °C
T
j
= 100 °C
T
j
= 25 °C
C(pF)
100
1000
1 10 100
V
R
(V)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C