Datasheet

Characteristics STPS1045DEE
2/8 Doc ID 023252 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.41 x I
F(AV)
+ 0.012 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values T
amb
= 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
Forward rms current 15 A
I
F(AV)
Average forward current Tc = 145 °C = 0.5 10 A
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal 100 A
P
ARM
(1)
1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Repetitive peak avalanche power tp = 10 µs Tj = 125 °C 300 W
T
stg
Storage temperature range -65 to +175 °C °C
Tj Maximum operating junction temperature 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 4 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms,  < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
- 200 µA
T
j
= 125 °C - 15 40 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs,  < 2%
Forward voltage drop
T
j
= 25 °C I
F
= 10A 0.59
V
T
j
= 125 °C - 0.45 0.53
T
j
= 25 °C
I
F
= 20A
-0.72
T
j
= 125 °C - 0.57 0.65