Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 5. On/off states
- Table 6. Dynamic
- Table 7. Switching times
- Table 8. Source drain diode
- 2.1 Electrical characteristics (curves)
- Figure 2. Safe operating area
- Figure 3. Thermal impedance
- Figure 4. Output characteristics
- Figure 5. Transfer characteristics
- Figure 6. Normalized BVDSS vs temperature
- Figure 7. Static drain-source on resistance
- Figure 8. Gate charge vs gate-source voltage
- Figure 9. Capacitance variations
- Figure 10. Normalized gate threshold voltage vs temperature
- Figure 11. Normalized on resistance vs temperature
- Figure 12. Source-drain diode forward characteristics
- 3 Test circuits
- 4 Package mechanical data
- 5 Packaging mechanical data
- 6 Revision history
STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Electrical characteristics
Doc ID 14511 Rev 2 5/15
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 80 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 320 A
V
SD
Forward on voltage I
SD
= 80 A, V
GS
= 0 1.5 V
t
rr
(2)
Q
rr
I
RRM
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80 A,V
DD
= 25 V
di/dt=100 A/µs,
T
j
=150 °C
(see Figure 18)
80
230
5.7
ns
nC
A