Datasheet

Electrical characteristics STB80NF55-08T4, STP80NF55-08, STW80NF55-08
4/15 Doc ID 14511 Rev 2
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0 55 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= max rating
V
DS
= max rating@125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 40 A 0.0065 0.008 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance V
DS
=15 V , I
D
= 18 A 40 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
3740
830
265
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 27 V, I
D
= 80 A
V
GS
=10 V
(see Figure 14)
112
20
40
155 nC
nC
nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 27 V, I
D
= 40 A
R
G
=4.7 Ω V
GS
= 10 V
(see Figure 13)
20
110
75
35
ns
ns
ns
ns