Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 5. On/off states
- Table 6. Dynamic
- Table 7. Switching times
- Table 8. Source drain diode
- 2.1 Electrical characteristics (curves)
- Figure 2. Safe operating area
- Figure 3. Thermal impedance
- Figure 4. Output characteristics
- Figure 5. Transfer characteristics
- Figure 6. Normalized BVDSS vs temperature
- Figure 7. Static drain-source on resistance
- Figure 8. Gate charge vs gate-source voltage
- Figure 9. Capacitance variations
- Figure 10. Normalized gate threshold voltage vs temperature
- Figure 11. Normalized on resistance vs temperature
- Figure 12. Source-drain diode forward characteristics
- 3 Test circuits
- 4 Package mechanical data
- 5 Packaging mechanical data
- 6 Revision history
April 2009 Doc ID 14511 Rev 2 1/15
15
STB80NF55-08T4
STP80NF55-08, STW80NF55-08
N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D
2
PAK, TO-247
STripFET™ Power MOSFET
Features
■ Standard threshold drive
Application
■ Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max
I
D
STB80NF55-08T4 55 V < 0.008 Ω 80 A
STP80NF55-08 55 V < 0.008 Ω 80 A
STW80NF55-08 55 V < 0.008 Ω 80 A
1
2
3
1
3
TO-247
TO-220
D²PAK
1
2
3
Table 1. Device summary
Order codes Marking Package Packaging
STB80NF55-08T4 B80NF55-08 D²PAK Tape and reel
STP80NF55-08 P80NF55-08 TO-220 Tube
STW80NF55-08 W80NF55-08 TO-247 Tube
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