Datasheet

Electrical characteristics STB80NF10, STP80NF10
4/14 Doc ID 6958 Rev 18
2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250 µA, V
GS
= 0 100 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating @125°C
500
10
nA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 40 A 0.012 0.015 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
DS
= 25 V
,
I
D
=40 A - 50 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
5500
700
175
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 50 V, I
D
= 80 A,
V
GS
= 10 V
-
135
23
51.3
182 nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 50 V, I
D
= 40 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 15)
-
26
80
116
60
-
ns
ns
ns
ns