Datasheet

STB80NF10, STP80NF10 Electrical ratings
Doc ID 6958 Rev 18 3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 100 V
V
GS
Gate- source voltage ±20 V
I
D
(1)
1. Limited by package
Drain current (continuous) at T
C
= 25 °C 80 A
I
D
(1)
Drain current (continuous) at T
C
= 100 °C 80 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25 °C 300 W
Derating factor 2 W/°C
dv/dt
(3)
3. I
SD
< 80 A, di/dt < 300 A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 7 V/ns
E
AS
(4)
4. Starting Tj = 25 °C, I
D
= 40 A, V
DD
= 50 V
Single pulse avalanche energy 350 mJ
T
stg
Tj
Storage temperature
Operating junction temperature
-55 to 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C