Datasheet
April 2009 Doc ID 6958 Rev 18 1/14
14
STB80NF10
STP80NF10
N-channel 100 V, 0.012 Ω, 80 A, TO-220, D
2
PA K
low gate charge STripFET™ II Power MOSFET
Features
■ Exceptional dv/dt capability
■ 100% Avalanche tested
■ Application oriented characterization
Applications
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max
I
D
STP80NF10 100 V < 0.015 Ω 80 A
STB80NF10 100 V < 0.015 Ω 80 A
1
2
3
1
3
TO-220
D²PAK
Table 1. Device summary
Order codes Marking Package Packaging
STP80NF10 P80NF10@ TO-220 Tube
STB80NF10T4 B80NF10@ D²PAK Tape and reel
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