Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 62A, 110W, TO-220

May 2009 Doc ID 9859 Rev 6 1/12

STP62NS04Z

N-channel clamped 12.5 mΩ, 62 A, TO-220

fully protected MESH OVERLAY™ Power MOSFET

Features

■ 100% avalanche tested

■ Low capacitance and gate charge

■ 175 °C maximum junction temperature

Application

■ Switching applications

Description

Fully clamped MOSFET is produced by using

ST's most advanced MESH OVERLAY™ process

based on strip layout. The inherent benefits of this

new technology coupled with the extra clamping

capabilities make this product particularly suitable

for the harshest operating conditions such as

those encountered in the automotive

environment. It is also recommended for any

other application requiring extra ruggedness.

Figure 1. Internal schematic diagram

Type V

DSS

DS(on)

max

STP62NS04Z Clamped < 0.015 Ω 62 A

TO-220

D(2)

G(1)

S(3)

SC12470

Table 1. Device summary

Order code Marking Package Packaging

STP62NS04Z P62NS04Z TO-220 Tube

www.st.com

Summary of content (12 pages)

PAGE 1
STP62NS04Z N-channel clamped 12.5 mΩ, 62 A, TO-220 fully protected MESH OVERLAY™ Power MOSFET Features ■ Type VDSS RDS(on) max ID STP62NS04Z Clamped < 0.015 Ω 62 A 3 100% avalanche tested 1 ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature 2 TO-220 Application ■ Switching applications Description Figure 1. Internal schematic diagram D(2) Fully clamped MOSFET is produced by using ST's most advanced MESH OVERLAY™ process based on strip layout.
PAGE 2
Contents STP62NS04Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STP62NS04Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) Clamped V VGS Gate-source voltage Clamped V ID Drain current (continuous) at TC = 25 °C 62 A ID Drain current (continuous) at TC=100 °C 37.5 A IDG Drain gate current (continuous) ± 50 mA IGS Gate sourcecurrent (continuous) ± 50 mA Drain current (pulsed) 248 A Total dissipation at TC = 25 °C 110 W Derating factor 0.
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Electrical characteristics 2 STP62NS04Z Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max.
PAGE 5
STP62NS04Z Electrical characteristics Table 7. Symbol ISD Parameter Test conditions Min Typ. Max Unit Source-drain current - 62 A (1) Source-drain current (pulsed) - 248 A (2) Forward on voltage ISD = 62 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, di/dt = 100 A/µs, VDD = 20 V, TJ = 150 °C Figure 16 on page 8 - ISDM VSD Source drain diode trr Qrr IRRM 45 65 2.9 ns nC A 1. Pulse width limited by safe operating area 2.
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Electrical characteristics STP62NS04Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characterisics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7.
PAGE 7
STP62NS04Z Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13.
PAGE 8
Test circuits 3 STP62NS04Z Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.
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STP62NS04Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
PAGE 10
Package mechanical data STP62NS04Z TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/12 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 Doc ID 9859 Rev 6 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.
PAGE 11
STP62NS04Z 5 Revision history Revision history Table 8.
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STP62NS04Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.