Datasheet

Electrical characteristics STP60NF06
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 µA, V
GS
= 0 60 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating 1 µA
V
DS
=Max rating, T
C
=125°C 10 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 30A 0.014 0.016 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
DS
= 15V
,
I
D
=30A 50 S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
1660 pF
C
oss
Output capacitance 400 pF
C
rss
Reverse transfer
capacitance
140 pF
Q
g
Total gate charge
V
DD
= 30V, I
D
= 60A,
V
GS
= 10V
(see Figure 12)
54 73 nC
Q
gs
Gate-source charge 9 nC
Q
gd
Gate-drain charge 23 nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 30V, I
D
= 30A
R
G
=4.7Ω V
GS
= 10V
(see Figure 11)
15
65
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
= 30V, I
D
= 30A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 11)
45
20
ns
ns