Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 60V, 60A, 110W, TO-220AB

March 2007 Rev 6 1/12

STP60NF06

N-channel 60V - 0.014Ω - 60A TO-220

STripFET II™ Power MOSFET

General features

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Application oriented characterization

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable as primary switch in advanced high-

efficiency isolated DC-DC converters for Telecom

and Computer application. It is also intended for

any application with low gate charge drive

requirements.

Applications

■ Switching application

Internal schematic diagram

Type V

DSS

DS(on)

STP60NF06 60V <0.016Ω 60A

TO-220

www.st.com

Order code

Part number Marking Package Packaging

STP60NF06 P60NF06 TO-220 Tube

Summary of content (12 pages)

PAGE 1
STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type VDSS RDS(on) ID STP60NF06 60V <0.016Ω 60A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220 Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
PAGE 2
Contents STP60NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STP60NF06 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate- source voltage ±20 V ID Drain current (continuos) at TC = 25°C 60 A ID Drain current (continuos) at TC = 100°C 42 A Drain current (pulsed) 240 A Total dissipation at TC = 25°C 110 W Derating factor 0.74 W/°C Peak diode recovery voltage slope 7.
PAGE 4
Electrical characteristics 2 STP60NF06 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 60 Unit V µA VDS=Max rating, TC=125°C 10 µA ±100 nA 4 V 0.014 0.016 Ω Typ. Max.
PAGE 5
STP60NF06 Electrical characteristics Table 7. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current 60 A ISDM (1) Source-drain current (pulsed) 240 A VSD (2) Forward on voltage ISD = 60A, VGS = 0 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60A, VDD=30V di/dt = 100A/µs, Tj = 150°C (see Figure 13) trr Qrr IRRM 70 185 5 ns nC A 1. Pulse width limited by safe operating area. 2.
PAGE 6
Electrical characteristics STP60NF06 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Source-drain diode forward characteristics Figure 6.
PAGE 7
STP60NF06 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Capacitance variations Figure 10.
PAGE 8
Test circuit 3 STP60NF06 Test circuit Figure 11. Switching times test circuit for resistive load Figure 12. Gate charge test circuit Figure 13. Test circuit for inductive load Figure 14. Unclamped Inductive load test switching and diode recovery times circuit Figure 15. Unclamped inductive waveform 8/12 Figure 16.
PAGE 9
STP60NF06 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
PAGE 10
Package mechanical data STP60NF06 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 θP Q 10/12 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.
PAGE 11
STP60NF06 5 Revision history Revision history Table 8.
PAGE 12
STP60NF06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.