Datasheet

Electrical characteristics STB55NF06, STP55NF06, STP55NF06FP
4/19 Doc ID 7544 Rev 11
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250 µA, V
GS
=0 60 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 60 V
V
DS
= 60 V,@ T
J
= 125 °C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 27.5 A 0.015 0.018 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1MHz,
V
GS
= 0
-
1300
300
105
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Tur n -o n de l ay t i me
Rise time
Turn-off delay time
Fall time
V
DD
= 30 V, I
D
= 27.5 A
R
G
=4.7 Ω V
GS
= 10 V
(see Figure 15)
-
20
50
36
15
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 48 V, I
D
= 55 A,
V
GS
= 10 V
(see Figure 16)
-
44.5
10.5
17.5
60 nC
nC
nC