Datasheet

DocID022854 Rev 4 3/20
STB45N65M5, STF45N65M5, STP45N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
D
2
PAK
TO-220
TO-220FP
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 35 35
(1)
1. Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C 22 22
(1)
A
I
DM
(1)
Drain current (pulsed) 140 140
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 210 40 W
dv/dt
(2)
2. I
SD
≤ 35 A, di/dt ≤ 400 A/µs, V
DS(Peak)
< V
(BR)DSS
, V
DD
= 400 V
Peak diode recovery voltage slope 15 V/ns
dv/dt
(3)
3. V
DS
≤ 480 V
MOSFET dv/dt ruggedness 50 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
C = 25 °C)
2500 V
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
D
2
PAK TO-220FP TO-220
R
thj-case
Thermal resistance junction-case max 0.60 3.13 0.60 °C/W
R
thj-pcb
(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Thermal resistance junction-pcb max 30 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetetive or not repetetive
(pulse width limited by T
jmax
)
9A
E
AS
Single pulse avalanche energy (starting t
j
=25°C,
I
d
= I
AR
; V
dd
=50)
810 mJ