Datasheet

Electrical characteristics STP40NF10
4/12 Doc ID 11096 Rev 5
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 µA, V
GS
= 0 100 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating 1 µA
V
DS
=Max rating,T
C
=125°C 10 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 25 A 0.025 0.028 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Forward transconductance V
DS
= 15 V
,
I
D
=28 A - 22 S
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
2180 pF
C
oss
Output capacitance - 298 pF
C
rss
Reverse transfer
capacitance
83.7 pF
Q
g
Total gate charge
V
DD
= 50 V, I
D
= 40 A,
V
GS
= 10V
(see Figure 15)
46.5 62 nC
Q
gs
Gate-source charge - 13.3 nC
Q
gd
Gate-drain charge 17.5 22.5 nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 50V, I
D
= 25A
R
G
=4.7Ω V
GS
= 10V
(see Figure 14)
-
21
46
-
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
-
54
13
-
ns
ns