Datasheet

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60 Electrical characteristics
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Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 300 V, I
D
= 10 A
R
G
= 4.7Ω V
GS
= 10 V
(see Figure 15)
25
20
42
11
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 20 A, V
GS
= 0 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=20A, di/dt=100A/µs,
V
DD
= 60 V
(see Figure 20)
390
5
25
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=20A, di/dt=100A/µs,
T
j
= 150°C, V
DD
= 60 V
(see Figure 20)
510
6.5
26
ns
µC
A