Datasheet

Electrical characteristics STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
4/18
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,@125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 30V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 3 4 5 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 10 A 0.25 0.29 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10 A
11 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
1500
350
35
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V to
480 V
215 pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480 V, I
D
= 20 A,
V
GS
= 10V
(see Figure 16)
39
10
20
54 nC
nC
nC
R
g
Gate input resistance
f = 1 MHz Gate DC
bias=0 Test signal
level = 20 mV
open drain
1.6 Ω