Datasheet

August 2007 Rev 12 1/18
18
STB20NM60-1 - STP20NM60FP
STB20NM60 - STP20NM60 - STW20NM60
N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D
2
/I
2
PA K
MDmesh™ Power MOSFET
Features
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
600V
600V
600V
600V
600V
< 0.29
< 0.29
< 0.29
< 0.29
< 0.29
20A
20A
20A
20A
20A
TO-247
1
3
1
2
3
TO-220
D²PAK
1
2
3
TO-220FP
1
2
3
I²PAK
Table 1. Device summary
Part number Marking Package Packaging
STP20NM60 P20NM60 TO-220 Tube
STP20NM60FP P20NM60FP TO-220FP Tube
STB20NM60T4 B20NM60 D²PAK Tape & reel
STB20NM60-1 B20NM60-1 I²PAK Tube
STW20NM60 W20NM60 TO-247 Tube
www.st.com

Summary of content (18 pages)