Datasheet

July 2006 Rev 11 1/17
17
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D
2
/I
2
PA K
MDmesh™ Power MOSFET
General features
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% avalanche tested
Low gate input resistance
Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STB12NM50 550V <0.35 12A
STB12NM50-1 550V <0.35 12A
STP12NM50 550V <0.35 12A
STP12NM50FP 550V <0.35 12A
TO-220
D²PAK
I²PAK
1
2
3
1
2
3
TO-220FP
1
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STB12NM50T4 B12NM50 D²PAK Tape & reel
STB12NM50-1 B12NM50 I²PAK Tube
STP12NM50 P12NM50 TO-220 Tube
STP12NM50FP P12NM50FP TO-220FP Tube

Summary of content (17 pages)