Datasheet
July 2006 Rev 11 1/17
17
STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D
2
/I
2
PA K
MDmesh™ Power MOSFET
General features
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100% avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STB12NM50 550V <0.35Ω 12A
STB12NM50-1 550V <0.35Ω 12A
STP12NM50 550V <0.35Ω 12A
STP12NM50FP 550V <0.35Ω 12A
TO-220
D²PAK
I²PAK
1
2
3
1
2
3
TO-220FP
1
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STB12NM50T4 B12NM50 D²PAK Tape & reel
STB12NM50-1 B12NM50 I²PAK Tube
STP12NM50 P12NM50 TO-220 Tube
STP12NM50FP P12NM50FP TO-220FP Tube










