Datasheet

ManualsBrandsST ManualsDiscrete SemiconductorsMOSFET, N-Channel, 60V, 4A, 3.3W, SOT-223

July 2017

DocID7798 Rev 9

1/12

This is information on a product in full production.

www.st.com

STN3NF06L

N-channel 60 V, 0.07 Ω typ., 4 A STripFET™ II

Power MOSFET in a SOT-223 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

DS(on)

max.

STN3NF06L

60 V

0.1 Ω

4 A

 Exceptional dv/dt capability

 100% avalanche tested

 Low threshold drive

Applications

 Switching applications

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET™ process

is specifically designed to minimize input

capacitance and gate charge. It is therefore ideal

as a primary switch in advanced high-efficiency

isolated DC-DC converters for Telecom and

Computer applications. It is also suitable for any

application with low gate charge drive

requirements.

Table 1: Device summary

Order code

Marking

Package

Packing

STN3NF06L

3NF06L

SOT-223

Tape and reel

Summary of content (12 pages)

PAGE 1
STN3NF06L N-channel 60 V, 0.07 Ω typ., 4 A STripFET™ II Power MOSFET in a SOT-223 package Datasheet - production data Features    Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.
PAGE 2
Contents STN3NF06L Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ......................................................
PAGE 3
STN3NF06L 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±16 V ID(1) Drain current (continuous) at Tc = 25 °C 4 A ID Drain current (continuous) at Tc = 100 °C 2.9 A IDM(2) Drain current (pulsed) 16 A PTOT Total dissipation at Tpcb = 25 °C 3.
PAGE 4
Electrical characteristics 2 STN3NF06L Electrical characteristics TC = 25 °C unless otherwise specified Table 4: On/off-state Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS VGS = 0 V, ID = 250 μA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 µA VGS = 0 V, VDS = 60 V TC = 125 °C(1) 10 µA ±100 nA 2.
PAGE 5
STN3NF06L Electrical characteristics Table 7: Source-drain diode Symbol VSD(1) Parameter Test conditions Min. Forward on voltage ISD= 4 A, VGS=0 V - trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 4 A, di/dt = 100 A/μs, VDD=25 V, Tj=150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Typ. Max. Unit 1.5 V - 50 ns - 88 nC - 3.5 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.
PAGE 6
Electrical characteristics 2.1 STN3NF06L Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics GC91920a Figure 6: Static drain-source on-resistance Figure 7: Gate charge vs.
PAGE 7
STN3NF06L Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature GC91980a GC93240 Figure 12: Source-drain diode forward characteristics DocID7798 Rev 9 7/12
PAGE 8
Test circuits 3 8/12 STN3NF06L Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID7798 Rev 9
PAGE 9
STN3NF06L 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.
PAGE 10
Package information STN3NF06L Table 8: SOT-223 package mechanical data mm Dim. Min. Typ. Max. A 1.8 A1 0.02 0.1 B 0.6 0.7 0.85 B1 2.9 3 3.15 c 0.24 0.26 0.35 D 6.3 6.5 6.7 e 2.3 e1 4.6 E 3.3 3.5 3.7 H 6.7 7.0 7.
PAGE 11
STN3NF06L 5 Revision history Revision history Table 9: Document revision history Date Revision Changes 21-Jun-2004 5 Complete version. 04-Oct-2006 6 New template, no content change. 01-Feb-2007 7 Typo mistake on Table 2. 12-Jun-2008 8 Corrected marking on Table 1 03-Jul-2017 9 Modified internal schematic diagram on cover page. Updated Section 4: "Package information". Minor text changes.
PAGE 12
STN3NF06L IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.