Datasheet

Electrical characteristics
STM8S105xx
10.3.5 Memory characteristics
RAM and hardware registers
Table 36: RAM and hardware registers
Symbol Parameter Conditions Min Unit
V
RM
Data retention mode
(1)
Halt mode (or reset) V
IT-max
(2)
V
Notes:
(1)
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production. refer to
Section 7.10: "TIM1 - 16-
bit advanced control timer"
for the value of V
IT-max
(2)
Refer to the Operating conditions section for the value of V
IT-max
Flash program memory/data EEPROM memory
General conditions: T
A
= -40 to 125°C.
Table 37: Flash program memory/data EEPROM memory
Symbol Parameter Conditions Min
(1)
Typ Max Unit
V
DD
Operating voltage (all modes,
execution/write/erase)
f
CPU
≤ 16
MHz
2.95 5.5 V
t
prog
Standard programming time (including
erase) for byte/word/block (1 byte/4
bytes/128 bytes)
6.0 6.6 ms
Fast programming time for 1 block (128
bytes)
3.0 3.3 ms
t
erase
Erase time for 1 block (128 bytes) 3.0 3.3 ms
N
RW
Erase/write cycles
(2)
(program memory) T
A
= +85 °C 10 k cycles
Erase/write cycles(data memory)
(2)
T
A
= +125 °
C
300
k
1.0M
t
RET
Data retention (program memory) after 10k
erase/write cycles at T
A
= +85 °C
T
RET
= 55° C 20 years
Data retention (data memory) after 10k
erase/write cycles at T
A
= +85 °C
T
RET
= 55° C 20
Data retention (data memory) after 300 k
erase/write cycles at T
A
= +125 °C
T
RET
= 85° C 1.0
I
DD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
2.0 mA
Notes:
(1)
Data based on characterization results, not tested in production.
(2)
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase
operation addresses a single byte.
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