Datasheet

Electrical characteristics
STM8S105xx
Symbol Ratings Min Max Unit
V
DD
|
pins
|V
SSx
-
V
SS
|
Variations between all the different
ground pins
50
V
ESD
Electrostatic discharge voltage see Section 13.3.12.4: "Absolute maximum ratings
(electrical sensitivity)"
Notes:
(1)
All power (V
DD
, V
DDIO
, V
DDA
) and ground (V
SS
, V
SSIO
, V
SSA
) pins must always be connected to the external
power supply
(2)
I
INJ(PIN)
must never be exceeded. This is implicitly insured if V
IN
maximum is respected. If V
IN
maximum cannot
be respected, the injection current must be limited externally to the I
INJ(PIN)
value. A positive injection is induced by
V
IN
>V
DD
while a negative injection is induced by V
IN
<V
SS
. For true open-drain pads, there is no positive injection
current, and the corresponding V
IN
maximum must always be respected
Table 17: Current characteristics
Symbol Ratings Max.
(1)
Unit
I
VDD
Total current into V
DD
power lines (source)
(2)
60 mA
I
VSS
Total current out of V
SS
ground lines (sink)
(2)
60
I
IO
Output current sunk by any I/O and control pin 20
Output current source by any I/Os and control pin 20
ΣI
IO
Total output current sourced (sum of all I/O and control pins) for devices
with two V
DDIO
pins
(3)
200
Total output current sourced (sum of all I/O and control pins) for devices
with one V
DDIO
pin
(3)
100
Total output current sunk (sum of all I/O and control pins) for devices
with two V
SSIO
pins
(3)
160
Total output current sunk (sum of all I/O and control pins) for devices
with one V
SSIO
pin
(3)
80
I
INJ(PIN)
(4)(5)
Injected current on NRST pin ±4
Injected current on OSCIN pin ±4
Injected current on any other pin
(6)
±4
ΣI
INJ(PIN)
(4)
Total injected current (sum of all I/O and control pins)
(6)
±20
Notes:
(1)
Data based on characterization results, not tested in production.
(2)
All power (V
DD
, V
DDIO
, V
DDA
) and ground (V
SS
, V
SSIO
, V
SSA
) pins must always be connected to the external
supply.
(3)
I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package
between the V
DDIO
/V
SSIO
pins.
(4)
I
INJ(PIN)
must never be exceeded. This is implicitly insured if V
IN
maximum is respected. If V
IN
maximum cannot
be respected, the injection current must be limited externally to the I
INJ(PIN)
value. A positive injection is induced by
V
IN
>V
DD
while a negative injection is induced by V
IN
<V
SS
. For true open-drain pads, there is no positive injection
current, and the corresponding V
IN
maximum must always be respected
(5)
Negative injection disturbs the analog performance of the device. See note in Section 7.11: "TIM2, TIM3 -
16-bit general purpose timers".
(6)
When several inputs are submitted to a current injection, the maximum ΣI
INJ(PIN)
is the absolute sum of the
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