Datasheet

Electrical characteristics STM8S105x4/6
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10.3.5 Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
Table 35. RAM and hardware registers
Symbol Parameter Conditions Min Unit
V
RM
Data retention mode
(1)
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset) V
IT-max
(2)
2. Refer to Section 10.3: Operating conditions for the value of V
IT-max
.
V
Table 36. Flash program memory/data EEPROM memory
Symbol Parameter Conditions Min
(1)
1. Data based on characterization results, not tested in production.
Typ Max Unit
V
DD
Operating voltage 
(all modes, execution/write/erase)
f
CPU
≤ 16 MHz 2.95 - 5.5 V
t
prog
Standard programming time (including
erase) for byte/word/block 
(1 byte/4 byte/128 byte)
--66.6
ms
Fast programming time for 1 block 
(128 byte)
--33.33
t
erase
Erase time for 1 block (128 byte) - - 3 3.33
N
RW
Erase/write cycles 
(program memory)
(2)
2. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a
write/erase operation addresses a single byte.
T
A
= +85 °C 10k - -
cycle
Erase/write cycles (data memory)
(2)
T
A
= +125 °C 300k 1M -
t
RET
Data retention (program and data
memory) after 10k erase/write cycles
at T
A
= +55 °C
T
RET
= 55 °C 20 - -
year
Data retention (data memory) after
300k erase/write cycles at 
T
A
= +125°C
T
RET
= 85 °C 1 - -
I
DD
Supply current (Flash programming or
erasing for 1 to 128 byte)
--2-mA
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