Datasheet

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STM8S003F3 STM8S003K3 Electrical characteristics
87
9.3.5 Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
General conditions: T
A
= -40 to 85 °C.
Table 36. RAM and hardware registers
Symbol Parameter Conditions Min Unit
V
RM
Data retention mode
(1)
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset) V
IT-max
(2)
2. Refer to Table 20 on page 50 for the value of V
IT-max
.
V
Table 37. Flash program memory/data EEPROM memory
Symbol Parameter Conditions Min
(1)
1. Data based on characterization results, not tested in production.
Typ Max Unit
V
DD
Operating voltage
(all modes, execution/write/erase)
f
CPU
≤ 16 MHz 2.95 - 5.5 V
t
prog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
--6.06.6ms
Fast programming time for 1 block
(128 bytes)
--3.03.3ms
t
erase
Erase time for 1 block (128 bytes) - - 3.0 3.3 ms
N
RW
Erase/write cycles
(2)
(program memory)
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
T
A
= 85 °C
100 - -
cycles
Erase/write cycles
(2)
(data memory)
100 k - -
t
RET
Data retention (program memory)
after 100 erase/write cycles at
T
A
= 85 °C
T
RET
= 55° C
20 - -
yearsData retention (data memory) after
10 k erase/write cycles at T
A
= 85 °C
20 - -
Data retention (data memory) after
100 k erase/write cycles at T
A
= 85 °C
T
RET
= 85° C 1.0 - -
I
DD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
--2.0-mA