Datasheet

Electrical characteristics STM8S003F3 STM8S003K3
48/103 DocID018576 Rev 5
Table 17. Current characteristics
Symbol Ratings Max.
(1)
1. Data based on characterization results, not tested in production.
Unit
I
VDD
Total current into V
DD
power lines (source)
(2)
2. All power (V
DD
, V
DDIO
, V
DDA
) and ground (V
SS
, V
SSIO
, V
SSA
) pins must always be connected to the
external supply.
100
mA
I
VSS
Total current out of V
SS
ground lines (sink)
(2)
80
I
IO
Output current sunk by any I/O and control pin 20
Output current source by any I/Os and control pin -20
I
INJ(PIN)
(3)(4)
3. I
INJ(PIN)
must never be exceeded. This is implicitly insured if V
IN
maximum is respected. If V
IN
maximum
cannot be respected, the injection current must be limited externally to the I
INJ(PIN)
value. A positive
injection is induced by V
IN
>V
DD
while a negative injection is induced by V
IN
<V
SS
. For true open-drain pads,
there is no positive injection current, and the corresponding V
IN
maximum must always be respected
4. Negative injection disturbs the analog performance of the device. See note in Section 9.3.10: 10-bit ADC
characteristics on page 82.
Injected current on NRST pin ±4
Injected current on OSCIN pin ±4
Injected current on any other pin
(5)
5. When several inputs are submitted to a current injection, the maximum Σ I
INJ(PIN)
is the absolute sum of the
positive and negative injected currents (instantaneous values). These results are based on characterization
with Σ I
INJ(PIN)
maximum current injection on four I/O port pins of the device.
±4
ΣI
INJ(PIN)
(3)
Total injected current (sum of all I/O and control pins)
(5)
±20
Table 18. Thermal characteristics
Symbol Ratings Value Unit
T
STG
Storage temperature range -65 to 150
°C
T
J
Maximum junction temperature 150