Datasheet

DS7147 Rev 10 65/103
STM8S003F3 STM8S003K3 Electrical characteristics
87
9.3.5 Memory characteristics
RAM and hardware registers
Flash program memory and data EEPROM
General conditions: T
A
= -40 to 85 °C.
Table 36. RAM and hardware registers
Symbol Parameter Conditions Min Unit
V
RM
Data retention mode
(1)
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design.
Halt mode (or reset) V
IT-max
(2)
2. Refer to Table 20 on page 50 for the value of V
IT-max
.
V
Table 37. Flash program memory and data EEPROM
Symbol Parameter Conditions Min
(1)
1. Data based on characterization results.
Typ Max Unit
V
DD
Operating voltage
(all modes, execution/write/erase)
f
CPU
≤ 16 MHz 2.95 - 5.5 V
t
prog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/64 bytes)
--6.06.6ms
Fast programming time for 1 block (64
bytes)
--3.03.3ms
t
erase
Erase time for 1 block (64 bytes) - - 3.0 3.3 ms
N
RW
Erase/write cycles
(2)
(program memory)
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
T
A
= 85 °C
100 - -
cycles
Erase/write cycles
(2)
(data memory)
100 k - -
t
RET
Data retention (program memory)
after 100 erase/write cycles at
T
A
= 85 °C
T
RET
= 55° C
20 - -
yearsData retention (data memory) after
10 k erase/write cycles at T
A
= 85 °C
20 - -
Data retention (data memory) after
100 k erase/write cycles at T
A
= 85 °C
T
RET
= 85° C 1.0 - -
I
DD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
--2.0-mA