Datasheet

DS7147 Rev 10 63/103
STM8S003F3 STM8S003K3 Electrical characteristics
87
HSE oscillator critical g
m
formula
R
m
: Notional resistance (see crystal specification)
L
m
: Notional inductance (see crystal specification)
C
m
: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
C
L1
=C
L2
=C: Grounded external capacitance
g
m
>> g
mcrit
9.3.4 Internal clock sources and timing characteristics
Subject to general operating conditions for V
DD
and T
A
.
High speed internal RC oscillator (HSI)
g
mcrit
2 Π× f
HSE
×()
2
R
m
× 2Co C+()
2
=
Table 34. HSI oscillator characteristics
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency - - 16 - MHz
ACC
HSI
Accuracy of HSI oscillator
User-trimmed with the
CLK_HSITRIMR register
for given V
DD
and T
A
conditions
(1)
1. See the application note.
--1.0
(2)
%
Accuracy of HSI oscillator
(factory calibrated)
V
DD
= 5 V,
-40 °C ≤ T
A
≤ 85 °C
-5 - 5
t
su(HSI)
HSI oscillator wakeup
time including calibration
- - - 1.0
(2)
2. Guaranteed by design.
µs
I
DD(HSI)
HSI oscillator power
consumption
- - 170 250
(3)
3. Data based on characterization results.
µA