Datasheet

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STM32L072xx Electrical characteristics
120
6.3.9 Memory characteristics
RAM memory
Flash memory and data EEPROM
Table 52. RAM and hardware registers
Symbol Parameter Conditions Min Typ Max Unit
VRM Data retention mode
(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET) 1.65 - - V
Table 53. Flash memory and data EEPROM characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design.
Unit
V
DD
Operating voltage
Read / Write / Erase
-1.65-3.6V
t
prog
Programming time for
word or half-page
Erasing - 3.28 3.94
ms
Programming - 3.28 3.94
I
DD
Average current during
the whole programming /
erase operation
T
A
= 25 °C, V
DD
= 3.6 V
- 500 700 µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.52.5mA
Table 54. Flash memory and data EEPROM endurance and retention
Symbol Parameter Conditions
Value
Unit
Min
(1)
N
CYC
(2)
Cycling (erase / write)
Program memory
T
A
= -40°C to 105 °C
10
kcycles
Cycling (erase / write)
EEPROM data memory
100
Cycling (erase / write)
Program memory
T
A
= -40°C to 125 °C
0.2
Cycling (erase / write)
EEPROM data memory
2
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