Datasheet

Electrical characteristics STM32L052x6 STM32L052x8
82/143 DocID025936 Rev 8
6.3.10 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 54. They are based on the EMS levels and classes
defined in application note AN1709.
t
RET
(2)
Data retention (program memory) after
10 kcycles at T
A
= 85 °C
T
RET
= +85 °C
30
years
Data retention (EEPROM data memory)
after 100 kcycles at T
A
= 85 °C
30
Data retention (program memory) after
10 kcycles at T
A
= 105 °C
T
RET
= +105 °C
10
Data retention (EEPROM data memory)
after 100 kcycles at T
A
= 105 °C
Data retention (program memory) after
200 cycles at T
A
= 125 °C
T
RET
= +125 °C
Data retention (EEPROM data memory)
after 2 kcycles at T
A
= 125 °C
1. Guaranteed by characterization results.
2. Characterization is done according to JEDEC JESD22-A117.
Table 53. Flash memory and data EEPROM endurance and retention (continued)
Symbol Parameter Conditions
Value
Unit
Min
(1)
Table 54. EMS characteristics
Symbol Parameter Conditions
Level/
Class
V
FESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
V
DD
= 3.3 V, LQFP64, T
A
= +25 °C,
f
HCLK
= 32 MHz
conforms to IEC 61000-4-2
3B
V
EFTB
Fast transient voltage burst limits to be
applied through 100 pF on V
DD
and V
SS
pins to induce a functional disturbance
V
DD
= 3.3 V, LQFP64, T
A
= +25 °C,
f
HCLK
= 32 MHz
conforms to IEC 61000-4-4
4A
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