Datasheet

DocID025936 Rev 8 59/143
STM32L052x6 STM32L052x8 Electrical characteristics
112
6.3.3 Embedded internal reference voltage
The parameters given in Table 28 are based on characterization results, unless otherwise
specified.
V
PVD6
PVD threshold 6
Falling edge 2.97 3.05 3.09
V
Rising edge 3.08 3.15 3.20
V
hyst
Hysteresis voltage
BOR0 threshold - 40 -
mV
All BOR and PVD thresholds
excepting BOR0
-100-
1. Guaranteed by characterization results.
2. Valid for device version without BOR at power up. Please see option "D" in Ordering information scheme for more details.
Table 26. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 27. Embedded internal reference voltage calibration values
Calibration value name Description Memory address
VREFINT_CAL
Raw data acquired at
temperature of 25 °C
V
DDA
= 3 V
0x1FF8 0078 - 0x1FF8 0079
Table 28. Embedded internal reference voltage
(1)
Symbol Parameter Conditions Min Typ Max Unit
V
REFINT out
(2)
Internal reference voltage – 40 °C < T
J
< +125 °C 1.202 1.224 1.242 V
T
VREFINT
Internal reference startup time - - 2 3 ms
V
VREF_MEAS
V
DDA
and V
REF+
voltage during
V
REFINT
factory measure
-2.9933.01V
A
VREF_MEAS
Accuracy of factory-measured
V
REFINT
value
(3)
Including uncertainties
due to ADC and
V
DDA
/V
REF+
values
-- ±5mV
T
Coeff
(4)
Temperature coefficient –40 °C < T
J
< +125 °C - 25 100 ppm/°C
A
Coeff
(4)
Long-term stability 1000 hours, T= 25 °C - - 1000 ppm
V
DDCoeff
(4)
Voltage coefficient 3.0 V < V
DDA
< 3.6 V - - 2000 ppm/V
T
S_vrefint
(4)(5)
ADC sampling time when
reading the internal reference
voltage
-510-µs
T
ADC_BUF
(4)
Startup time of reference
voltage buffer for ADC
---10µs
I
BUF_ADC
(4)
Consumption of reference
voltage buffer for ADC
- - 13.5 25 µA
I
VREF_OUT
(4)
VREF_OUT output current
(6)
---1µA
C
VREF_OUT
(4)
VREF_OUT output load - - - 50 pF
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