Datasheet

Electrical characteristics STM32L031x4/6
80/126 DS10668 Rev 6
6.3.13 I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 53 are derived from tests
performed under the conditions summarized in Table 20. All I/Os are CMOS and TTL
compliant.
Table 53. I/O static characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
IL
Input low level voltage
TC, FT, FTf, RST
I/Os
- - 0.3V
DD
V
BOOT0 pin - - 0.14V
DD
(1)
V
IH
Input high level voltage All I/Os 0.7 V
DD
--
V
hys
I/O Schmitt trigger voltage hysteresis
(2)
Standard I/Os - 10% V
DD
(3)
-
BOOT0 pin - 0.01 -
I
lkg
Input leakage current
(4)
V
SS
≤V
IN
≤V
DD
All I/Os except
PA11, PA12, BOOT0
and FTf I/Os
--±50
nA
V
SS
≤V
IN
≤V
DD
PA11 and P12 I/Os
- - –50/+250
V
SS
≤V
IN
≤V
DD
FTf I/Os
- - ±100
V
DD
≤V
IN
≤5V
All I/Os except for
PA11, PA12, BOOT0
and FTf I/Os
--200
V
DD
≤V
IN
≤5V
FTf I/Os
--500
V
DD
≤V
IN
≤5V
PA11, PA12 and
BOOT0
- - 10 µA
R
PU
Weak pull-up equivalent resistor
(5)
V
IN
= V
SS
25 45 65 kΩ
R
PD
Weak pull-down equivalent resistor
(5)
V
IN
= V
DD
25 45 65 kΩ
C
IO
I/O pin capacitance - - 5 - pF
1. Guaranteed by characterization.
2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results.
3. With a minimum of 200 mV. Guaranteed by characterization results.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).
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