Datasheet

Electrical characteristics STM32L031x4/6
78/126 DS10668 Rev 6
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
6.3.11 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 49. EMI characteristics
Symbol Parameter Conditions
Monitored
frequency band
Max vs.
f
OSC
/f
CPU
Unit
8MHz/32MHz
S
EMI
Peak level
V
DD
= 3.6 V,
T
A
= 25 °C,
LQFP48 package
conforming to IEC61967-2
0.1 to 30 MHz –10
dBµV30 to 130 MHz 5
130 MHz to 1GHz –5
EMI Level 1.5 -
Table 50. ESD absolute maximum ratings
Symbol Ratings Conditions Class
Maximum
value
(1)
1. Guaranteed by characterization results.
Unit
V
ESD(HBM)
Electrostatic discharge
voltage (human body model)
T
A
= +25 °C,
conforming to
ANSI/JEDEC JS-001
22000
V
V
ESD(CDM)
Electrostatic discharge
voltage (charge device
model)
T
A
= +25 °C,
conforming to
ANSI/ESD STM5.3.1.
C4 500
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