Datasheet

DS12323 Rev 2 41/91
STM32L010F4/K4 Electrical characteristics
81
6.3.3 Embedded internal reference voltage
The parameters given in Table 18 are based on characterization results, unless otherwise
specified.
V
POR/PDR
Power on/power down reset
threshold
Falling edge 1 1.5 1.8
V
Rising edge 1.3 1.5 1.8
V
BOR0
Brownout reset threshold 0
Falling edge 1.67 1.7 1.74
Rising edge 1.69 1.76 1.8
V
BOR1
Brownout reset threshold 1
Falling edge 1.87 1.93 1.97
Rising edge 1.96 2.03 2.07
V
BOR2
Brownout reset threshold 2
Falling edge 2.22 2.30 2.35
Rising edge 2.31 2.41 2.44
V
BOR3
Brownout reset threshold 3
Falling edge 2.45 2.55 2.6
Rising edge 2.54 2.66 2.7
V
BOR4
Brownout reset threshold 4
Falling edge 2.68 2.8 2.85
Rising edge 2.78 2.9 2.95
V
hyst
Hysteresis voltage
BOR0 threshold - 40 -
mV
All BOR thresholds excepting BOR0 - 100 -
1. Guaranteed by characterization results, not tested in production.
Table 16. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ
Max Unit
Table 17. Embedded internal reference voltage calibration values
Calibration value name Description Memory address
VREFINT_CAL Raw data acquired at temperature of 25°C, V
DDA
= 3 V 0x1FF8 0078 - 0x1FF8 0079
Table 18. Embedded internal reference voltage
(1)
Symbol Parameter Conditions Min Typ
Max Unit
V
REFINT out
(2)
Internal reference voltage –40 °C < T
J
< +85 °C 1.202 1.224 1.242 V
T
VREFINT
Internal reference startup time - - 2 3 ms
V
VREF_MEAS
V
DDA
voltage during V
REFINT
factory measure
-2.9933.01V
A
VREF_MEAS
Accuracy of factory-measured
V
REFINT
value
(3)
Including uncertainties
due to ADC and V
DDA
values
-- ±5mV
T
Coeff
(4)
Temperature coefficient
–40 °C < T
J
< +85 °C - 25 100
ppm/°C
0 °C < T
J
< +50 °C - - 20
A
Coeff
(4)
Long-term stability 1000 hours, T= 25 °C - - 1000 ppm
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