Datasheet

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STM32F765xx STM32F767xx STM32F768Ax STM32F769xx Electrical characteristics
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5.3.17 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to V
DD
and V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 61. They are based on the EMS levels and classes
defined in application note AN1709.
As a consequence, it is recommended to add a serial resistor (1 kΏ) located as close as
possible to the MCU to the pins exposed to noise (connected to tracks longer than 50
mm
on PCB).
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
Table 61. EMS characteristics
Symbol Parameter Conditions
Level/
Class
V
FESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
V
DD
= 3.3 V, T
A
= +25 °C, f
HCLK
=
216 MHz, conforms to IEC 61000-
4-2
2B
V
FTB
Fast transient voltage burst limits to be
applied through 100 pF on V
DD
and V
SS
pins to induce a functional disturbance
V
DD
= 3.3 V, T
A
=+25 °C, f
HCLK
=
168 MHz, conforms to IEC 61000-
4-2
5A
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