Datasheet

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STM32F446xC/E Electrical characteristics
175
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 32 and
Table 58, respectively.
Unless otherwise specified, the parameters given in Table 58 are derived from tests
performed under the ambient temperature and V
DD
supply voltage conditions summarized
in
Table 16.
Table 57. Output voltage characteristics
Symbol Parameter Conditions Min Max Unit
V
OL
(1)
1. The I
IO
current sunk by the device must always respect the absolute maximum rating specified in Table 14.
and the sum of I
IO
(I/O ports and control pins) must not exceed I
VSS
.
Output low level voltage for an I/O pin CMOS port
(2)
I
IO
= +8 mA
2.7 V
≤ V
DD
≤ 3.6 V
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
-0.4
V
V
OH
(3)
3. The I
IO
current sourced by the device must always respect the absolute maximum rating specified in
Table 14 and the sum of I
IO
(I/O ports and control pins) must not exceed I
VDD
.
Output high level voltage for an I/O pin V
DD
–0.4 -
V
OL
(1)
Output low level voltage for an I/O pin TTL port
(2)
I
IO
=+ 8mA
2.7 V
≤ V
DD
≤ 3.6 V
-0.4
V
V
OH
(3)
Output high level voltage for an I/O pin 2.4 -
V
OL
(1)
Output low level voltage for an I/O pin
I
IO
= +20 mA
2.7 V
≤ V
DD
≤ 3.6 V
-1.3
(4)
4. Based on characterization data.
V
V
OH
(3)
Output high level voltage for an I/O pin V
DD
–1.3
(4)
-
V
OL
(1)
Output low level voltage for an I/O pin
I
IO
= +6 mA
1.8 V
≤ V
DD
≤ 3.6 V
-0.4
(4)
V
V
OH
(3)
Output high level voltage for an I/O pin V
DD
–0.4
(4)
-
V
OL
(1)
Output low level voltage for an I/O pin
I
IO
= +4 mA
1.7 V ≤ V
DD
≤ 3.6V
-0.4
(5)
5. Guaranteed by design.
V
V
OH
(3)
Output high level voltage for an I/O pin V
DD
–0.4
(5)
-
Table 58. I/O AC characteristics
(1)(2)
OSPEEDR
y[1:0] bit
value
(1)
Symbol Parameter Conditions Min Typ Max Unit
00
f
max(IO)out
Maximum frequency
(3)
C
L
= 50 pF, V
DD
≥ 2.7 V - - 4
MHz
C
L
= 50 pF, V
DD
≥ 1.7 V - - 2
C
L
= 10 pF, V
DD
≥ 2.7 V - - 8
C
L
= 10 pF, V
DD
≥ 1.8 V - - 4
C
L
= 10 pF, V
DD
≥ 1.7 V - - 3
t
f(IO)out
/
t
r(IO)out
Output high to low level fall
time and output low to high
level rise time
C
L
= 50 pF, V
DD
= 1.7 V
to 3.6 V
--100ns
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