Datasheet

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STM32F427xx STM32F429xx Electrical characteristics
198
Table 50. Flash memory endurance and data retention
6.3.14 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to V
DD
and V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 51. They are based on the EMS levels and classes
defined in application note AN1709.
When the application is exposed to a noisy environment, it is recommended to avoid pin
exposition to disturbances. The pins showing a middle range robustness are: PA0, PA1,
PA2, PH2, PH3, PH4, PH5, PA3, PA4, PA5, PA6, PA7, PC4, and PC5.
As a consequence, it is recommended to add a serial resistor (1 kΏ) located as close as
possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm
on PCB).
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Guaranteed by characterization results.
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30
Years1 kcycle
(2)
at T
A
= 105 °C 10
10 kcycles
(2)
at T
A
= 55 °C 20
Table 51. EMS characteristics
Symbol Parameter Conditions
Level/
Class
V
FESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
V
DD
= 3.3 V, LQFP176, T
A
=
+25 °C, f
HCLK
= 168 MHz, conforms
to IEC 61000-4-2
2B
V
EFTB
Fast transient voltage burst limits to be
applied through 100 pF on V
DD
and V
SS
pins to induce a functional disturbance
V
DD
= 3.3 V, LQFP176, T
A
=+25 °C,
f
HCLK
= 168 MHz, conforms to
IEC 61000-4-2
4A
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