Datasheet

Electrical characteristics STM32F411xC STM32F411xE
92/149 DocID026289 Rev 6
Table 45. Flash memory programming
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
1. Guaranteed by characterization results.
Unit
t
prog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16100
(2)
2. The maximum programming time is measured after 100K erase operations.
µs
t
ERASE16KB
Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
- 400 800
ms
Program/erase parallelism
(PSIZE) = x 16
- 300 600
Program/erase parallelism
(PSIZE) = x 32
- 250 500
t
ERASE64KB
Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
- 1200 2400
ms
Program/erase parallelism
(PSIZE) = x 16
- 700 1400
Program/erase parallelism
(PSIZE) = x 32
- 550 1100
t
ERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-24
s
Program/erase parallelism
(PSIZE) = x 16
-1.32.6
Program/erase parallelism
(PSIZE) = x 32
-12
t
ME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-816
s
Program/erase parallelism
(PSIZE) = x 16
-5.511
Program/erase parallelism
(PSIZE) = x 32
-48
V
prog
Programming voltage
32-bit program operation 2.7 - 3.6 V
16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.7 - 3.6 V
Table 46. Flash memory programming with V
PP
voltage
Symbol Parameter Conditions Min
(1)
Typ Max
(1)
Unit
t
prog
Double word programming
T
A
= 0 to +40 °C
V
DD
= 3.3 V
V
PP
= 8.5 V
- 16 100
(2)
µs
t
ERASE16KB
Sector (16 KB) erase time - 230 -
mst
ERASE64KB
Sector (64 KB) erase time - 490 -
t
ERASE128KB
Sector (128 KB) erase time - 875 -
t
ME
Mass erase time - 3.50 - s
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