Datasheet

Electrical characteristics STM32F411xC STM32F411xE
64/149 DocID026289 Rev 6
6.3.2 VCAP_1/VCAP_2 external capacitors
Stabilization for the main regulator is achieved by connecting the external capacitor C
EXT
to
the VCAP_1 and VCAP_2 pins. For packages supporting only 1 VCAP pin, the 2 CEXT
capacitors are replaced by a single capacitor.
C
EXT
is specified in Table 16.
Figure 19. External capacitor C
EXT
1. Legend: ESR is the equivalent series resistance.
V
DD
= 2.4 to
2.7 V
Conversion
time up to
2.4 Msps
24 MHz
100 MHz with 4
wait states
– I/O
compensation
works
up to 50 MHz
16-bit erase
and program
operations
V
DD
= 2.7 to
3.6 V
(6)
Conversion
time up to
2.4 Msps
30 MHz
100 MHz with 3
wait states
– I/O
compensation
works
–up to
100 MHz
when V
DD
=
3.0 to 3.6 V
–up to
50 MHz
when V
DD
=
2.7 to 3.0 V
32-bit erase
and program
operations
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is
required.
2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the
execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state
program execution.
3. Refer to Table 55: I/O AC characteristics for frequencies vs. external load.
4. V
DD
/V
DDA
minimum value of 1.7 V, with the use of an external power supply supervisor (refer to Section 3.15.2: Internal
reset OFF).
5. Prefetch is not available. Refer to AN3430 application note for details on how to adjust performance and power.
6. The voltage range for the USB full speed embedded PHY can drop down to 2.7 V. However the electrical characteristics of
D- and D+ pins will be degraded between 2.7 and 3 V.
Table 15. Features depending on the operating power supply range (continued)
Operating
power
supply
range
ADC
operation
Maximum
Flash
memory
access
frequency
with no wait
states
(f
Flashmax
)
Maximum Flash
memory access
frequency with
wait states
(1)(2)
I/O operation
Clock output
frequency on
I/O pins
(3)
Possible
Flash
memory
operations
069
(65
5
/HDN
&
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