Datasheet

DocID026289 Rev 6 63/149
STM32F411xC STM32F411xE Electrical characteristics
123
P
D
Power dissipation at
T
A
= 125 °C (range 3)
(7)
UFQFPN48 - - 156
mW
WLCSP49 - - 98
LQFP64 - - 106
LQFP100 - - 116
UFBGA100 - - 81
T
A
Ambient temperature for
range 6
Maximum power dissipation - 40 - 85
°C
Low power dissipation
(8)
- 40 - 105
Ambient temperature for
range 7
Maximum power dissipation - 40 - 105
Low power dissipation
(8)
- 40 - 125
Ambient temperature for
range 3
Maximum power dissipation - 40 - 110
Low power dissipation
(8)
- 40 - 130
TJ Junction temperature range
Range 6 - 40 - 105
Range 7 - 40 - 125
Range 3 - 40 - 130
1. V
DD
/V
DDA
minimum value of 1.7 V with the use of an external power supply supervisor (refer to Section 3.15.2: Internal
reset OFF).
2. When the ADC is used, refer to Table 65: ADC characteristics.
3. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
4. It is recommended to power V
DD
and V
DDA
from the same source. A maximum difference of 300 mV between V
DD
and
V
DDA
can be tolerated during power-up and power-down operation.
5. Guaranteed by test in production.
6. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled
7. If T
A
is lower, higher P
D
values are allowed as long as T
J
does not exceed T
Jmax
.
8. In low power dissipation state, T
A
can be extended to this range as long as T
J
does not exceed T
Jmax
.
Table 14. General operating conditions (continued)
Symbol Parameter Conditions Min Typ Max Unit
Table 15. Features depending on the operating power supply range
Operating
power
supply
range
ADC
operation
Maximum
Flash
memory
access
frequency
with no wait
states
(f
Flashmax
)
Maximum Flash
memory access
frequency with
wait states
(1)(2)
I/O operation
Clock output
frequency on
I/O pins
(3)
Possible
Flash
memory
operations
V
DD
=1.7 to
2.1 V
(4)
Conversion
time up to
1.2 Msps
16 MHz
(5)
100 MHz with 6
wait states
– No I/O
compensation
up to 30 MHz
8-bit erase
and program
operations
only
V
DD
= 2.1 to
2.4 V
Conversion
time up to
1.2 Msps
18 MHz
100 MHz with 5
wait states
– No I/O
compensation
up to 30 MHz
16-bit erase
and program
operations
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