Datasheet

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STM32F410x8/B Electrical characteristics
118
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements for FT and TC I/Os is shown in Figure 27.
V
IH
FT, TC and NRST I/O input high
level voltage
(5)
1.7 V≤ V
DD
≤ 3.6 V 0.7V
DD
(1)
--
V
BOOT0 I/O input high level
voltage
1.75 V≤ V
DD
≤ 3.6 V,
-40 °C
≤ T
A
≤ 125 °C
0.17V
DD
+
0.7
(2)
--
1.7 V
≤ V
DD
≤ 3.6 V,
0 °C≤ T
A
≤ 125 °C
V
HYS
FT, TC and NRST I/O input
hysteresis
1.7 V
≤ V
DD
≤ 3.6 V - 10% V
DD
(3)
-V
BOOT0 I/O input hysteresis
1.75 V≤ V
DD
≤ 3.6 V,
- 40 °C
≤ T
A
≤ 125 °C
-100 -mV
1.7 V
≤ V
DD
≤ 3.6 V,
0 °C≤ T
A
≤ 125 °C
I
lkg
I/O input leakage current
(4)
V
SS
≤ V
IN
≤ V
DD
-- ±1
µA
I/O FT/TC input leakage current
(5)
V
IN
= 5 V - - 3
R
PU
Weak pull-up
equivalent
resistor
(6)
All pins
except for
PA10
(OTG_FS_ID)
V
IN
= V
SS
30 40 50
kΩ
PA10
(OTG_FS_ID)
- 7 10 14
R
PD
Weak pull-down
equivalent
resistor
(7)
All pins
except for
PA10
(OTG_FS_ID)
V
IN
= V
DD
30 40 50
PA10
(OTG_FS_ID)
- 7 10 14
C
IO
(8)
I/O pin capacitance - - 5 - pF
1. Guaranteed by tests in production.
2. Guaranteed by design.
3. With a minimum of 200 mV.
4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 54: I/O
current injection susceptibility
5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be
higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 54: I/O current injection
susceptibility
6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the
series resistance is minimum (~10% order).
7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the
series resistance is minimum (~10% order).
8. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization.
Table 55. I/O static characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit
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