Datasheet

STM32F405xx, STM32F407xx Electrical characteristics
Doc ID 022152 Rev 2 95/167
Table 38. Flash memory endurance and data retention
5.3.13 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
● FTB: A burst of fast transient voltage (positive and negative) is applied to V
DD
and V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
Table 37. Flash memory programming with V
PP
(1)
1. TBD stands for “to be defined”.
Symbol Parameter Conditions Min
(1)
Typ Max
(2)
2. Guaranteed by design, not tested in production.
Unit
t
prog
Double word programming
T
A
= 0 to +40 °C
- 16 100
(3)
3. The maximum programming time is measured after 100K erase operations.
µs
t
ERASE16KB
Sector (16 KB) erase time - TBD -
t
ERASE64KB
Sector (64 KB) erase time - TBD -
t
ERASE128KB
Sector (128 KB) erase time - TBD -
t
ME
Mass erase time - 6.8 -
V
prog
Programming voltage 2.7 - 3.6 V
V
PP
V
PP
voltage range 7 - 9 V
I
PP
Minimum current sunk on
the V
PP
pin
10 - - mA
t
VPP
(4)
4. V
PP
should only be connected during programming/erasing.
Cumulative time during
which V
PP
is applied
- - 1 hour
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Based on characterization, not tested in production.
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30
Years1 kcycle
(2)
at T
A
= 105 °C 10
10 kcycles
(2)
at T
A
= 55 °C 20