Datasheet

Electrical characteristics STM32F405xx, STM32F407xx
88/167 Doc ID 022152 Rev 2
5.3.9 Internal clock source characteristics
The parameters given in Ta bl e 3 0 and Ta bl e 3 1 are derived from tests performed under
ambient temperature and V
DD
supply voltage conditions summarized in Ta bl e 1 1 .
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Table 30. HSI oscillator characteristics
(1)
1. V
DD
= 3.3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
f
HSI
Frequency - 16 - MHz
ACC
HSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register
(2)
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
--1%
Factory-
calibrated
T
A
= –40 to 105 °C –8 - 4.5 %
T
A
= –10 to 85 °C –4 - 4 %
T
A
= 25 °C –1 - 1 %
t
su(HSI)
(3)
3. Guaranteed by design, not tested in production.
HSI oscillator
startup time
-2.24 µs
I
DD(HSI)
HSI oscillator
power consumption
-6080µA
Table 31. LSI oscillator characteristics
(1)
1. V
DD
= 3 V, T
A
= –40 to 105 °C unless otherwise specified.
Symbol Parameter Min Typ Max Unit
f
LSI
(2)
2. Based on characterization, not tested in production.
Frequency 17 32 47 kHz
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time - 15 40 µs
I
DD(LSI)
(3)
LSI oscillator power consumption - 0.4 0.6 µA