Datasheet

Electrical characteristics STM32F405xx, STM32F407xx
70/167 Doc ID 022152 Rev 2
5.3.6 Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 19: Current consumption
measurement scheme.
All Run mode current consumption measurements given in this section are performed using
a CoreMark-compliant code.
V
BOR1
Brownout level 1
threshold
Falling edge 2.13 2.19 2.24 V
Rising edge 2.23 2.29 2.33 V
V
BOR2
Brownout level 2
threshold
Falling edge 2.44 2.50 2.56 V
Rising edge 2.53 2.59 2.63 V
V
BOR3
Brownout level 3
threshold
Falling edge 2.75 2.83 2.88 V
Rising edge 2.85 2.92 2.97 V
V
12
1.2 V domain
voltage
(2)(3)
VOS bit in PWR_CR
register = 0
1.08 1.14 1.20 V
VOS bit in PWR_CR
register = 1
1.20 1.26 1.32 V
V
BORhyst
(3)
BOR hysteresis - 100 - mV
T
RSTTEMPO
(3)(4)
Reset temporization 0.5 1.5 3.0 ms
I
RUSH
(3)
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
- 160 200 mA
E
RUSH
(3)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
V
DD
= 1.8 V, T
A
= 105 °C,
I
RUSH
= 171 mA for 31 µs
--5.4µC
1. The product behavior is guaranteed by design down to the minimum V
POR/PDR
value.
2. The average expected gain in power consumption when VOS = 0 compared to VOS = 1 is around 10% for
the whole temperature range, when the system clock frequency is between 30 and 144 MHz.
3. Guaranteed by design, not tested in production.
4. The reset temporization is measured from the power-on (POR reset or wakeup from V
BAT
) to the instant
when first instruction is read by the user application code.
Table 16. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit