Datasheet

STM32F405xx, STM32F407xx Electrical characteristics
Doc ID 022152 Rev 2 123/167
5.3.21 Temperature sensor characteristics
5.3.22 V
BAT
monitoring characteristics
5.3.23 Embedded reference voltage
The parameters given in Ta bl e 6 9 are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in Ta bl e 1 1 .
Table 67. TS characteristics
Symbol Parameter Min Typ Max Unit
T
L
(1)
V
SENSE
linearity with temperature - ±1 ±2°C
Avg_Slope
(1)
Average slope - 2.5 mV/°C
V
25
(1)
Voltage at 25 °C - 0.76 V
t
START
(2)
Startup time - 6 10 µs
T
S_temp
(3)(2)
ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs
1. Based on characterization, not tested in production.
2. Guaranteed by design, not tested in production.
3. Shortest sampling time can be determined in the application by multiple iterations.
Table 68. V
BAT
monitoring characteristics
Symbol Parameter Min Typ Max Unit
R Resistor bridge for V
BAT
-50-KΩ
Q
Ratio on V
BAT
measurement - 2 -
Er
(1)
Error on Q –1 - +1 %
T
S_vbat
(2)(2)
ADC sampling time when reading the V
BAT
1 mV accuracy
5--µs
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 69. Embedded internal reference voltage
Symbol Parameter Conditions Min
Typ
Max Unit
V
REFINT
Internal reference voltage –40 °C < T
A
< +105 °C 1.18 1.21 1.24 V
T
S_vrefint
(1)
ADC sampling time when reading the
internal reference voltage
10 - - µs
V
RERINT_s
(2)
Internal reference voltage spread over the
temperature range
V
DD
= 3 V - 3 5 mV
T
Coeff
(2)
Temperature coefficient - 30 50 ppm/°C
t
START
(2)
Startup time - 6 10 µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.