Datasheet

Electrical characteristics STM32F401xD STM32F401xE
94/135
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 31 and ,
respectively.
Unless otherwise specified, the parameters given in Table 56 are derived from tests
performed under the ambient temperature and V
DD
supply voltage conditions summarized
in Table 14.
Table 55. Output voltage characteristics
Symbol Parameter Conditions Min Max Unit
V
OL
(1)
1. The I
IO
current sunk by the device must always respect the absolute maximum rating specified in Table 12.
and the sum of I
IO
(I/O ports and control pins) must not exceed I
VSS
.
Output low level voltage for an I/O pin CMOS port
(2)
I
IO
= +8 mA
2.7 V
≤ V
DD
≤ 3.6 V
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
-0.4
V
V
OH
(3)
3. The I
IO
current sourced by the device must always respect the absolute maximum rating specified in
Table 12 and the sum of I
IO
(I/O ports and control pins) must not exceed I
VDD
.
Output high level voltage for an I/O pin V
DD
–0.4 -
V
OL
(1)
Output low level voltage for an I/O pin TTL port
(2)
I
IO
=+8 mA
2.7 V
≤ V
DD
≤ 3.6 V
-0.4
V
V
OH
(3)
Output high level voltage for an I/O pin 2.4 -
V
OL
(1)
Output low level voltage for an I/O pin
I
IO
= +20 mA
2.7 V
≤ V
DD
≤ 3.6 V
-1.3
(4)
4. Guaranteed by characterization results, not tested in production.
V
V
OH
(3)
Output high level voltage for an I/O pin V
DD
–1.3
(4)
-
V
OL
(1)
Output low level voltage for an I/O pin
I
IO
= +6 mA
1.8 V
≤ V
DD
≤ 3.6 V
-0.4
(4)
V
V
OH
(3)
Output high level voltage for an I/O pin V
DD
–0.4
(4)
-
V
OL
(1)
Output low level voltage for an I/O pin
I
IO
= +4 mA
1.7 V ≤ V
DD
≤ 3.6 V
-0.4
(5)
5. Guaranteed by design, not tested in production..
V
V
OH
(3)
Output high level voltage for an I/O pin V
DD
–0.4
(5)
-
Table 56. I/O AC characteristics
(1)(2)
OSPEEDRy
[1:0] bit
value
(1)
Symbol Parameter Conditions Min Typ Max Unit
00
f
max(IO)out
Maximum frequency
(3)
C
L
= 50 pF, V
DD
≥ 2.70 V - - 4
MHz
C
L
= 50 pF, V
DD
≥ 1.7 V - - 2
C
L
= 10 pF, V
DD
≥ 2.70 V - - 8
C
L
= 10 pF, V
DD
≥ 1.7 V - - 4
t
f(IO)out
/
t
r(IO)out
Output high to low level fall
time and output low to high
level rise time
C
L
= 50 pF, V
DD
= 1.7 V to
3.6 V
--100ns
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