Datasheet

Electrical characteristics STM32F303x6/x8
74/121 DocID025083 Rev 7
6.3.12 Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 48. EMI characteristics
Symbol Parameter Conditions
Monitored
frequency band
Max vs. [f
HSE
/f
HCLK
]
Unit
8/72 MHz
S
EMI
Peak level
V
DD
= 3.6 V, T
A
=25 °C,
LQFP100 package
compliant with IEC
61967-2
0.1 to 30 MHz 5
dBµV30 to 130 MHz 9
130 MHz to 1GHz 31
SAE EMI Level 4 -
Table 49. ESD absolute maximum ratings
Symbol Ratings Conditions Class
Maximum
value
(1)
1. Data based on characterization results, not tested in production.
Unit
V
ESD(HBM
)
Electrostatic discharge
voltage (human body model)
T
A
= +25 °C,
conforming to JESD22-
A114
22000
V
V
ESD(CD
M)
Electrostatic discharge
voltage (charge device
model)
T
A
= +25 °C,
conforming to JESD22-
C101
II 250
Table 50. Electrical sensitivities
Symbol Parameter Conditions Class
LU Static latch-up class T
A
= +105 °C conforming to JESD78A II level A
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