Datasheet

ManualsBrandsST ManualsEmbedded Processors & ControllersMicrocontroller 32bit 64KB UFQFPN

This is information on a product in full production.

June 2017 DocID025147 Rev 7 1/138

STM32F302x6 STM32F302x8

ARM

Cortex

-M4 32-bit MCU+FPU, up to 64 KB Flash,

16 KB SRAM, ADC, DAC, USB, CAN, COMP, Op-Amp, 2.0 - 3.6 V

Datasheet - production data

Features

• Core: ARM

32-bit Cortex

-M4 CPU with FPU

2 MHz max.), single-cycle multiplic

ation and

division, DSP inst

ruction

• Me

mori

–

32 to 64 Kbytes of Flash memory

– 16 Kbytes of SRAM on data bus

• CRC calculation unit

• Reset and power management

–V

, V

DDA

voltage range: 2.0 to 3.6 V

–

Power-on/Power down reset (POR/PDR)

– Programmable voltage detector

(PVD)

–

Low-power: Sleep, Stop, and Standb

–V

BAT

supply for RTC and backup registers

• Clock ma

nagem

ent

–

4 to 32 MHz crysta

l oscillator

–

32 kHz oscillator for RTC with ca

libration

–

Internal 8 MHz RC with x 16 PLL option

– Internal 40 kHz os

cillator

• Up t

o 51 fast I/O ports

, all mappable on

exter

nal interrupt vectors, several 5 V-tolerant

• Interconnect matrix

• 7-channel DMA controller supporting time

rs,

ADCs, SPIs,

Cs, USARTs and DAC

• 1

× ADC 0.20 μs (up to 15 chann

els) with

selectab

le resolution of 12/10/8/6 bits, 0

3.6 V co

nversion range, sing

ded/differential mode, separate analog

supply from 2.0 to

3.6 V

• T

emperature sensor

• 1 x 12-bit DAC channel

with analog supply from

2.4 to 3.6 V

• Three fast rail-to-rail analog comparators with

analog supply from 2.0 to 3.6

• 1 x

operational amplifier that can be used in

PGA mode, all terminal accessible with anal

supp

ly from

2.4 to 3.6 V

• Up to

18 capacitive sensing chan

nels

supp

orting touchkey, linear and rotary sensor

• Up to 9 t

imers

– One 32-bit timer with up to 4 IC/OC

/PWM

pulse counter and quadratur

(in

cremental) encoder input

– One 16-bit 6-channel advanced-contr

tim

er, with up to 6 PWM chann

els,

adtime generation and emergency stop

– Three 16-bit timers with IC/OC/OCN

PWM

, deadtime gen. and emergency stop

– One 16-bit basic timer to drive the DAC

– 2 watchdog timers (independent, window)

– SysTick timer: 24-bit downcounte

• Calendar RTC

with alarm, periodic

wakeup

from S

top/S

tandby

• Co

mmunication interfaces

– Three I2Cs with 20 mA current sink

pport Fast mode

plus

–

Up to 3 USARTs, 1 with ISO 7816 I/F,

auto

udrate detect and Dual clock doma

–

Up to two SPIs with mu

ltiplexed full duplex

–

USB 2.0 full-speed interface

– 1 x CAN interface (2.0B Ac

tive)

–

nfrared transmitter

• Ser

ial wire debug (SWD), JT

• 96

-bit unique ID

Table 1. Device summary

Reference Part number

STM32F302x6 STM32F302R6, STM32F302C6, STM32F302K6

STM32F302x8 STM32F302R8, STM32F302C8, STM32F302K8

LQFP48 (7x7 mm)

LQFP64 (10x10 mm)

UFQFPN32

(5x5 mm)

WLCSP49

(3.417x3.151 mm)

www.st.com

Downloaded from Arrow.com.

Summary of content (138 pages)

PAGE 1
STM32F302x6 STM32F302x8 ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, USB, CAN, COMP, Op-Amp, 2.0 - 3.6 V Datasheet - production data Features • Core: ARM® 32-bit Cortex®-M4 CPU with FPU (72 MHz max.), single-cycle multiplication and HW division, DSP instruction • Memories – 32 to 64 Kbytes of Flash memory – 16 Kbytes of SRAM on data bus • Reset and power management – VDD, VDDA voltage range: 2.0 to 3.
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Contents STM32F302x6 STM32F302x8 Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.1 ARM® Cortex®-M4 core with FPU, embedded Flash and SRAM . . . . . . . 13 3.2 Memories . . . . . . . . . . . . . . . . . . . .
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STM32F302x6 STM32F302x8 Contents 3.15.4 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.15.5 Window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.15.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.16 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 24 3.17 Inter-integrated circuit interfaces (I2C) . . . . . . .
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Contents 7 STM32F302x6 STM32F302x8 6.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 6.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 6.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 6.3.10 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 6.3.11 EMC characteristics . . . . . . . . . . .
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STM32F302x6 STM32F302x8 List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Table 34. Table 35. Table 36. Table 37. Table 38. Table 39. Table 40. Table 41. Table 42. Table 43. Table 44. Table 45. Table 46.
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List of tables Table 47. Table 48. Table 49. Table 50. Table 51. Table 52. Table 53. Table 54. Table 55. Table 56. Table 57. Table 58. Table 59. Table 60. Table 61. Table 62. Table 63. Table 64. Table 65. Table 66. Table 67. Table 68. Table 69. Table 70. Table 71. Table 72. Table 73. Table 74. Table 75. Table 76. Table 77. Table 78. Table 79. Table 80. Table 81. Table 82. Table 83. Table 84. 6/138 Downloaded from Arrow.com. STM32F302x6 STM32F302x8 Flash memory endurance and data retention . . . . . . .
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STM32F302x6 STM32F302x8 List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42.
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List of figures Figure 45. Figure 46. Figure 47. Figure 48. 8/138 Downloaded from Arrow.com. STM32F302x6 STM32F302x8 LQFP48 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 UFQFPN32 - 32-pin, 5x5 mm, 0.5 mm pitch ultra thin fine pitch quad flat package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 UFQFPN32 - 32-pin, 5x5 mm, 0.
PAGE 9
STM32F302x6 STM32F302x8 1 Introduction Introduction This datasheet provides the ordering information and mechanical device characteristics of the STM32F302x6/8 microcontrollers. This datasheet should be read in conjunction with the STM32F302xB/C/D/E and STM32F302x6/8 advanced ARM®-based 32-bit MCUs reference manual (RM0365). The reference manual is available from the STMicroelectronics website www.st.com.
PAGE 10
Description 2 STM32F302x6 STM32F302x8 Description The STM32F302x6/8 family is based on the high-performance ARM® Cortex®-M4 32-bit RISC core operating at a frequency of up to 72 MHz and embedding a floating point unit (FPU). The family incorporates high-speed embedded memories (up to 64 Kbytes of Flash memory, 16 Kbytes of SRAM), and an extensive range of enhanced I/Os and peripherals connected to two APB buses.
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STM32F302x6 STM32F302x8 Description Table 2. STM32F302x6/8 device features and peripheral counts Peripheral STM32F302Kx Flash (Kbytes) 32 64 SRAM (Kbytes) Timers 32 STM32F302Rx 64 32 64 16 Advanced control 1 (16-bit) General purpose 3 (16-bit) 1 (32 bit) Basic 1 SysTick timer 1 Watchdog timers (independent, window) 2 PWM channels (all)(1) 16 18 PWM channels (except complementary) 10 12 SPI/I2S 2 2C 3 I Comm. interfaces USART GPIOs STM32F302Cx 2 3 USB 2.0 FS 1 CAN 2.
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Description STM32F302x6 STM32F302x8 Figure 1. DS9896 block diagram 73,8 9ROWDJH UHJ 9 WR 9 2%/ ,EXV &RUWH[ 0 &38 )ODVK LQWHUIDFH )38 )PD[ 0+] 6\VWHP 19,& 65$0 .% 325 6XSSO\ 6XSHUYLVLRQ 5HVHW ,QW 325 3'5 39' 5& +6 0+] ;7$/ 26& 0+] ,QG :'* . 6WDQGE\ LQWHUIDFH $+%3&/. 7HPS VHQVRU $3%3 &/. ,) 5HVHW FORFN FRQWURO *3,2 3257 % 3&> @ *3,2 3257 & 3'> @ *3,2 3257 ' 3)> @ *3,2 3257 ) 7,0(5 &KDQQHO &RPS &KDQQHO %5.
PAGE 13
STM32F302x6 STM32F302x8 Functional overview 3 Functional overview 3.1 ARM® Cortex®-M4 core with FPU, embedded Flash and SRAM The ARM® Cortex®-M4 processor with FPU is the latest generation of ARM processors for embedded systems. It was developed to provide a low-cost platform that meets the needs of MCU implementation, with a reduced pin count and low-power consumption, while delivering outstanding computational performance and an advanced response to interrupts.
PAGE 14
Functional overview 3.4 STM32F302x6 STM32F302x8 Cyclic redundancy check calculation unit (CRC) The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a configurable generator polynomial value and size. Among other applications, CRC-based techniques are used to verify data transmission or storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of verifying the Flash memory integrity.
PAGE 15
STM32F302x6 STM32F302x8 3.5.3 Functional overview Voltage regulator The regulator has three operation modes: main (MR), low-power (LPR), and power-down. • The MR mode is used in the nominal regulation mode (Run) • The LPR mode is used in Stop mode. • The power-down mode is used in Standby mode: the regulator output is in high impedance, and the kernel circuitry is powered down thus inducing zero consumption. The voltage regulator is always enabled after reset. It is disabled in Standby mode. 3.5.
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Functional overview STM32F302x6 STM32F302x8 Table 4. STM32F302x6/8 peripheral interconnect matrix Interconnect source 16/138 Downloaded from Arrow.com.
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STM32F302x6 STM32F302x8 3.7 Functional overview Clocks and startup System clock selection is performed on startup, however the internal RC 8 MHz oscillator is selected as default CPU clock on reset. An external 4-32 MHz clock can be selected, in which case it is monitored for failure. If failure is detected, the system automatically switches back to the internal RC oscillator. A software interrupt is generated if enabled.
PAGE 18
Functional overview STM32F302x6 STM32F302x8 Figure 2. Clock tree )/,7)&/. WR )ODVK SURJUDPPLQJ LQWHUIDFH +6, WR , &[ [ 6<6&/. , 665& 6<6&/. WR , 6[ [ ([W FORFN , 6B&.,1 86% SUHVFDOHU 0+] +6, +6, 5& 86%&/. WR 86% LQWHUIDFH +&/. 3//65& 3//08/ 3// [ [ [ 6: +6, 3//&/. +6( $+% $+% SUHVFDOHU $3% SUHVFDOHU 6<6&/. 26&B287 26&B,1 26& B,1 26& B287 3&/. 6<6&/.
PAGE 19
STM32F302x6 STM32F302x8 3.8 Functional overview General-purpose inputs/outputs (GPIOs) Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog alternate functions. All GPIOs are high current capable except for analog inputs.
PAGE 20
Functional overview 3.11 STM32F302x6 STM32F302x8 Fast analog-to-digital converter (ADC) An analog-to-digital converter, with selectable resolution between 12 and 6 bit, is embedded in the STM32F302x6/8 family devices. The ADC has up to 15 external channels performing conversions in single-shot or scan modes. Channels can be configured to be either singleended input or differential input. In scan mode, automatic conversion is performed on a selected group of analog inputs.
PAGE 21
STM32F302x6 STM32F302x8 3.11.3 Functional overview VBAT battery voltage monitoring This embedded hardware feature allows the application to measure the VBAT battery voltage using the internal ADC channel ADC1_IN17. As the VBAT voltage may be higher than VDDA, and thus outside the ADC input range, the VBAT pin is internally connected to a bridge divider by 2. As a consequence, the converted digital value is half the VBAT voltage. 3.
PAGE 22
Functional overview 3.14 STM32F302x6 STM32F302x8 Ultra-fast comparators (COMP) The STM32F302x6/8 devices embed up to three ultra-fast rail-to-rail comparators which offer the features below: • Programmable internal or external reference voltage • Selectable output polarity. The reference voltage can be one of the following: • External I/O • DAC output • Internal reference voltage or submultiple (1/4, 1/2, 3/4).
PAGE 23
STM32F302x6 STM32F302x8 3.15.1 Functional overview Advanced timer (TIM1) The advanced-control timer can each be seen as a three-phase PWM multiplexed on 6 channels. They have complementary PWM outputs with programmable inserted deadtimes. They can also be seen as complete general-purpose timers.
PAGE 24
Functional overview 3.15.3 STM32F302x6 STM32F302x8 Basic timer (TIM6) This timer is mainly used for DAC trigger generation. It can also be used as a generic 16-bit time base. 3.15.4 Independent watchdog (IWDG) The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is clocked from an independent 40 kHz internal RC and as it operates independently from the main clock, it can operate in Stop and Standby modes.
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STM32F302x6 STM32F302x8 Functional overview The RTC is an independent BCD timer/counter. It supports the following features: • Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date, month, year, in BCD (binary-coded decimal) format. • Automatic correction for 28, 29 (leap year), 30, and 31 days of the month. • Two programmable alarms with wake up from Stop and Standby mode capability. • On-the-fly correction from 1 to 32767 RTC clock pulses.
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Functional overview 3.17 STM32F302x6 STM32F302x8 Inter-integrated circuit interfaces (I2C) The devices feature three I2C bus interfaces which can operate in multimaster and slave mode. Each I2C interface can support standard (up to 100 kHz), fast (up to 400 kHz) and fast mode + (up to 1 MHz) modes. All I2C interfaces support 7-bit and 10-bit addressing modes, multiple 7-bit slave addresses (2 addresses, 1 with configurable mask). They also include programmable analog and digital noise filters. Table 6.
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STM32F302x6 STM32F302x8 3.18 Functional overview Universal synchronous/asynchronous receiver transmitter (USART) The STM32F302x6/8 devices have three embedded universal synchronous receiver transmitters (USART1, USART2 and USART3). The USART interfaces are able to communicate at speeds of up to 9 Mbit/s. All USARTs support hardware management of the CTS and RTS signals, multiprocessor communication mode, single-wire half-duplex communication mode and synchronous mode.
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Functional overview STM32F302x6 STM32F302x8 mode, the master clock can be output to the external DAC/CODEC at 256 times the sampling frequency. Refer to Table 9 for the features available in SPI2 and SPI3. Table 9. STM32F302x6/8 SPI/I2S implementation SPI features(1) SPI2 SPI3 Hardware CRC calculation X X Rx/Tx FIFO X X NSS pulse mode X X I2S mode X X TI mode X X 1. X = supported. 3.20 Controller area network (CAN) The CAN is compliant with specifications 2.
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STM32F302x6 STM32F302x8 Memory mapping Table 19.
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Memory mapping STM32F302x6 STM32F302x8 Table 19. STM32F302x6 STM32F302x8 peripheral register boundary addresses (continued)(1) Bus Boundary address 0x0004 0000 - 0x07FF FFFF APB1 0x0000 000 - 0x0000 FFFF 1. The gray color is used for reserved Flash memory addresses. 52/138 Downloaded from Arrow.com.
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STM32F302x6 STM32F302x8 Electrical characteristics 6 Electrical characteristics 6.1 Parameter conditions Unless otherwise specified, all voltages are referenced to VSS. 6.1.1 Minimum and maximum values Unless otherwise specified, the minimum and maximum values are guaranteed in the worst conditions of ambient temperature, supply voltage and frequencies by tests in production on 100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by the selected temperature range).
PAGE 32
Electrical characteristics 6.1.6 STM32F302x6 STM32F302x8 Power supply scheme Figure 11. Power supply scheme 9%$7 %DFNXS FLUFXLWU\ /6( 57& :DNHXS ORJLF %DFNXS UHJLVWHUV 287 *3 , 2V ,1 /HYHO VKLIWHU 3RZHU VZLWFK ± 9 9'' [ 9'' [ Q) [ ) , 2 ORJLF .HUQHO ORJLF &38 GLJLWDO PHPRULHV 5HJXODWRU [ 966 9''$ 9''$ 95() Q) ) $'& '$& 95() $QDORJ 5&V 3// FRPSDUDWRUV 23$03 966$ 06 9 Caution: 54/138 Downloaded from Arrow.com.
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STM32F302x6 STM32F302x8 6.1.7 Electrical characteristics Current consumption measurement Figure 12. Current consumption measurement scheme , ''B9%$7 9%$7 ,'' 9'' ,''$ 9''$ 06 9 DocID025147 Rev 7 55/138 117 Downloaded from Arrow.com.
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Electrical characteristics 6.2 STM32F302x6 STM32F302x8 Absolute maximum ratings Stresses above the absolute maximum ratings listed in Table 20: Voltage characteristics, Table 21: Current characteristics, and Table 22: Thermal characteristics may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 20.
PAGE 35
STM32F302x6 STM32F302x8 Electrical characteristics Table 21. Current characteristics Symbol Ratings Max.
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Electrical characteristics STM32F302x6 STM32F302x8 6.3 Operating conditions 6.3.1 General operating conditions Table 23. General operating conditions Symbol Parameter Conditions Min Max fHCLK Internal AHB clock frequency - 0 72 fPCLK1 Internal APB1 clock frequency - 0 36 fPCLK2 Internal APB2 clock frequency - 0 72 Standard operating voltage - 2 3.6 2 3.
PAGE 37
STM32F302x6 STM32F302x8 6.3.2 Electrical characteristics Operating conditions at power-up / power-down The parameters given in Table 24 are derived from tests performed under the ambient temperature condition summarized in Table 23. Table 24. Operating conditions at power-up / power-down Symbol Parameter VDD rise time rate tVDD - VDD fall time rate VDDA rise time rate tVDDA 6.3.
PAGE 38
Electrical characteristics STM32F302x6 STM32F302x8 Table 26. Programmable voltage detector characteristics Symbol Parameter VPVD0 PVD threshold 0 VPVD1 PVD threshold 1 VPVD2 PVD threshold 2 VPVD3 PVD threshold 3 Min(1) Typ Max(1) Rising edge 2.1 2.18 2.26 Falling edge 2 2.08 2.16 Rising edge 2.19 2.28 2.37 Falling edge 2.09 2.18 2.27 Rising edge 2.28 2.38 2.48 Falling edge 2.18 2.28 2.38 Rising edge 2.38 2.48 2.58 Falling edge 2.28 2.38 2.48 Rising edge 2.
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STM32F302x6 STM32F302x8 6.3.4 Electrical characteristics Embedded reference voltage The parameters given in Table 27 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 23. Table 27. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.20 1.23 1.25 V TS_vrefint ADC sampling time when reading the internal reference voltage - 2.
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Electrical characteristics STM32F302x6 STM32F302x8 Typical and maximum current consumption The MCU is placed under the following conditions: • All I/O pins are in input mode with a static value at VDD or VSS (no load) • All peripherals are disabled except when explicitly mentioned • The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0 to 24 MHz,1 wait state from 24 to 48 MHz and 2 wait states from 48 to 72 MHz) • Prefetch in ON (reminder: this bit must be set before
PAGE 41
STM32F302x6 STM32F302x8 Electrical characteristics Table 29. Typical and maximum current consumption from VDD supply at VDD = 3.6V (continued) All peripherals enabled Symbol Parameter Conditions IDD Supply current in Run mode, executing from RAM fHCLK Max @ TA(1) Typ Unit 85 °C 105 °C 25 °C 85 °C 105 °C 72 MHz 45.8 49.1(2) 50.1 51.4(2) 25.1 27.3(2) 28.0 28.6(2) 64 MHz 40.8 43.6 44.9 46.9 22.3 24.1 25.0 25.5 48 MHz 30.2 External clock (HSE 32 MHz 20.5 bypass) 24 MHz 15.4 32.
PAGE 42
Electrical characteristics STM32F302x6 STM32F302x8 Table 30. Typical and maximum current consumption from the VDDA supply VDDA = 2.4 V Symbol Parameter IDDA Supply current in Run mode, code executing from Flash or RAM Conditions (1) HSE bypass HSI clock fHCLK Typ VDDA = 3.
PAGE 43
STM32F302x6 STM32F302x8 Electrical characteristics Table 32. Typical and maximum VDDA consumption in Stop and Standby modes Supply current in Stop mode IDDA Supply current in Standby mode Supply current in Stop mode Supply current in Standby mode Max(1) 2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V TA = TA = TA = 25 °C 85 °C 105 °C 1.70 1.83 1.95 2.08 2.22 2.37 3.40 5.30 5.5 - - - 2.80 2.90 3.
PAGE 44
Electrical characteristics STM32F302x6 STM32F302x8 Figure 13. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] = ‘00’) 9%$7 $ 9 9 9 9 , 9 9 9 9 & & & & 7$ & 06[[[[[9\ 06 Typical current consumption The MCU is placed under the following conditions: 66/138 Downloaded from Arrow.com. • VDD = VDDA = 3.
PAGE 45
STM32F302x6 STM32F302x8 Electrical characteristics Table 34. Typical current consumption in Run mode, code with data processing running from Flash Typ Symbol IDD Parameter Conditions Supply current in Run mode from VDD supply Running from HSE crystal clock 8 MHz, code executing from Flash IDDA(1) (2) Supply current in Run mode from VDDA supply fHCLK Peripherals enabled Peripherals disabled 72 MHz 44.8 24.9 64 MHz 40.0 22.4 48 MHz 30.3 17.1 32 MHz 20.7 11.9 24 MHz 15.8 9.
PAGE 46
Electrical characteristics STM32F302x6 STM32F302x8 Table 35. Typical current consumption in Sleep mode, code running from Flash or RAM Typ Symbol IDD Parameter Conditions Supply current in Sleep mode from VDD supply Running from HSE crystal clock 8 MHz, code executing from Flash or RAM IDDA(1) (2) Supply current in Sleep mode from VDDA supply fHCLK Peripherals enabled Peripherals disabled 72 MHz 28.7 6.1 64 MHz 25.6 5.5 48 MHz 19.3 4.26 32 MHz 13.1 3.04 24 MHz 10.0 2.
PAGE 47
STM32F302x6 STM32F302x8 Electrical characteristics I/O system current consumption The current consumption of the I/O system has two components: static and dynamic. I/O static current consumption All the I/Os used as inputs with pull-up generate current consumption when the pin is externally held low. The value of this current consumption can be simply computed by using the pull-up/pull-down resistors values given in Table 53: I/O static characteristics.
PAGE 48
Electrical characteristics STM32F302x6 STM32F302x8 Table 36. Switching output I/O current consumption Symbol Parameter Conditions(1) VDD = 3.3 V Cext = 0 pF C = CINT + CEXT+ CS VDD = 3.3 V Cext = 10 pF C = CINT + CEXT +CS ISW I/O current consumption VDD = 3.3 V Cext = 22 pF C = CINT + CEXT +CS VDD = 3.3 V Cext = 33 pF C = CINT + CEXT+ CS VDD = 3.3 V Cext = 47 pF C = CINT + CEXT+ CS 1. CS = 5 pF (estimated value). 70/138 Downloaded from Arrow.com.
PAGE 49
STM32F302x6 STM32F302x8 Electrical characteristics On-chip peripheral current consumption The MCU is placed under the following conditions: • all I/O pins are in analog input configuration • all peripherals are disabled unless otherwise mentioned • the given value is calculated by measuring the current consumption • – with all peripherals clocked off – with only one peripheral clocked on ambient operating temperature at 25°C and VDD = VDDA = 3.3 V.
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Electrical characteristics STM32F302x6 STM32F302x8 Table 37. Peripheral current consumption Peripheral Typical consumption(1) BusMatrix (2) 11.3 DMA1 6.7 CRC 2.0 GPIOA 8.5 GPIOB 8.3 GPIOC 8.6 GPIOD 1.5 GPIOF 1.0 TSC 4.7 ADC1 APB2-Bridge Unit IDD 15.9 (3) 2.7 SYSCFG 3.2 TIM1 27.6 USART1 21.0 TIM15 14.3 TIM16 10.1 TIM17 10.4 APB1-Bridge (3) 5.8 TIM2 40.7 TIM6 7.4 WWDG 4.6 SPI2 35.2 SPI3 34.2 USART2 13.9 USART3 13.1 I2C1 9.4 I2C2 9.4 USB 17.
PAGE 51
STM32F302x6 STM32F302x8 6.3.6 Electrical characteristics Wakeup time from low-power mode The wakeup times given in Table 38 are measured starting from the wakeup event trigger up to the first instruction executed by the CPU: • For Stop or Sleep mode: the wakeup event is WFE. • WKUP1 (PA0) pin is used to wakeup from Standby, Stop and Sleep modes. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 23. Table 38.
PAGE 52
Electrical characteristics 6.3.7 STM32F302x6 STM32F302x8 External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The external clock signal has to respect the I/O characteristics in Section 6.3.14. However, the recommended clock input waveform is shown in Figure 14. Table 39.
PAGE 53
STM32F302x6 STM32F302x8 Electrical characteristics Low-speed external user clock generated from an external source In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO. The external clock signal has to respect the I/O characteristics in Section 6.3.14. However, the recommended clock input waveform is shown in Figure 15 Table 40.
PAGE 54
Electrical characteristics STM32F302x6 STM32F302x8 High-speed external clock generated from a crystal/ceramic resonator The high-speed external (HSE) clock can be supplied with a 4 to 32 MHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on design simulation results obtained with typical external components specified in Table 41.
PAGE 55
STM32F302x6 STM32F302x8 Electrical characteristics For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the 5 pF to 25 pF range (Typ.), designed for high-frequency applications, and selected to match the requirements of the crystal or resonator (see Figure 16). CL1 and CL2 are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2.
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Electrical characteristics STM32F302x6 STM32F302x8 Low-speed external clock generated from a crystal/ceramic resonator The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on design simulation results obtained with typical external components specified in Table 42.
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STM32F302x6 STM32F302x8 Electrical characteristics Figure 17. Typical application with a 32.768 kHz crystal 5HVRQDWRU ZLWK LQWHJUDWHG FDSDFLWRUV &/ 26& B,1 I/6( 'ULYH SURJUDPPDEOH DPSOLILHU N+] UHVRQDWRU 26& B287 &/ 06 9 Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. DocID025147 Rev 7 79/138 117 Downloaded from Arrow.com.
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Electrical characteristics 6.3.8 STM32F302x6 STM32F302x8 Internal clock source characteristics The parameters given in Table 43 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 23. High-speed internal (HSI) RC oscillator Table 43.
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STM32F302x6 STM32F302x8 Electrical characteristics Low-speed internal (LSI) RC oscillator Table 44. LSI oscillator characteristics(1) Symbol fLSI tsu(LSI) Parameter Min Typ Max Unit 30 40 50 kHz LSI oscillator startup time - - 85 µs LSI oscillator power consumption - 0.75 1.2 µA Frequency (2) IDD(LSI)(2) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Guaranteed by design. 6.3.
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Electrical characteristics 6.3.10 STM32F302x6 STM32F302x8 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 46. Flash memory characteristics Min Typ Max(1) Unit 16-bit programming time TA = –40 to +105 °C 40 53.
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STM32F302x6 STM32F302x8 6.3.11 Electrical characteristics EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs.
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Electrical characteristics STM32F302x6 STM32F302x8 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values.
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STM32F302x6 STM32F302x8 Electrical characteristics Static latch-up Two complementary static tests are required on six parts to assess the latch-up performance: • A supply overvoltage is applied to each power supply pin • A current injection is applied to each input, output and configurable I/O pin These tests are compliant with EIA/JESD 78A IC latch-up standard. Table 51. Electrical sensitivities Symbol LU 6.3.
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Electrical characteristics STM32F302x6 STM32F302x8 Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. 6.3.14 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 53 are derived from tests performed under the conditions summarized in Table 23. All I/Os are CMOS and TTL compliant. Table 53.
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STM32F302x6 STM32F302x8 Electrical characteristics 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order). All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 19 and Figure 20 for standard I/Os. Figure 19.
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Electrical characteristics STM32F302x6 STM32F302x8 Figure 21. Five volt tolerant (FT and FTf) I/O input characteristics - CMOS port 9 LQ 9,/ 9,+ 9 LUHP UHTX GDUG VWDQ XODWLRQV ' 9 'VLJQ VLP H RQ G DVHG 6 &02 '' ,+P HQWV 9 9 ,+PLQ % ODWLRQV '' X 9 LJQ VLP 9 ,/PD[ RQ GHV G H V %D $UHD QRW GHWHUPLQHG WV 9,/PD[ UHTXLUHPHQ UG &026 VWDQGD 9'' 9'' 9 06 9 Figure 22.
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STM32F302x6 STM32F302x8 Electrical characteristics Output driving current The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink or source up to +/- 20 mA (with a relaxed VOL/VOH). In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in Section 6.
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Electrical characteristics STM32F302x6 STM32F302x8 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 23 and Table 55, respectively. Unless otherwise specified, the parameters given are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 23. Table 55.
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STM32F302x6 STM32F302x8 Electrical characteristics Figure 23. I/O AC characteristics definition ([WHUQDO RXWSXW RQ &/ WU ,2 RXW WI ,2 RXW 7 0D[LPXP IUHTXHQF\ LV DFKLHYHG LI WU WI 7 DQG LI WKH GXW\ F\FOH LV ZKHQ ORDGHG E\ &/ VHH QRWH 06 9 1. See Table 55: I/O AC characteristics. 6.3.15 NRST pin characteristics The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up resistor, RPU (see Table 53).
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Electrical characteristics STM32F302x6 STM32F302x8 Figure 24. Recommended NRST pin protection ([WHUQDO UHVHW FLUFXLW 9'' 538 1567 ,QWHUQDO UHVHW )LOWHU ) 06 9 1. The reset network protects the device against parasitic resets. 0.1 uF capacitor must be placed as close as possible to the chip. 2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in Table 56. Otherwise the reset will not be taken into account by the device. 3.
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STM32F302x6 STM32F302x8 Electrical characteristics 2. Guaranteed by design. Table 58. IWDG min/max timeout period at 40 kHz (LSI) (1) Prescaler divider PR[2:0] bits Min timeout (ms) RL[11:0]= 0x000 Max timeout (ms) RL[11:0]= 0xFFF /4 0 0.1 409.6 /8 1 0.2 819.2 /16 2 0.4 1638.4 /32 3 0.8 3276.8 /64 4 1.6 6553.6 /128 5 3.2 13107.2 /256 7 6.4 26214.4 1. These timings are given for a 40 kHz clock but the microcontroller internal RC frequency can vary from 30 to 60 kHz.
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Electrical characteristics 6.3.17 STM32F302x6 STM32F302x8 Communications interfaces I2C interface characteristics The I2C interface meets the timings requirements of the I2C-bus specification and user manual rev. 03 for: • Standard-mode (Sm): with a bit rate up to 100 kbit/s • Fast-mode (Fm): with a bit rate up to 400 kbit/s • Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
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STM32F302x6 STM32F302x8 Electrical characteristics SPI/I2S characteristics Unless otherwise specified, the parameters given in Table 61 for SPI or in Table 62 for I2S are derived from tests performed under ambient temperature, fPCLKx frequency and VDD supply voltage conditions summarized in Table 23. Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S). Table 61.
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Electrical characteristics STM32F302x6 STM32F302x8 Figure 25. SPI timing diagram - slave mode and CPHA = 0 Figure 26. SPI timing diagram - slave mode and CPHA = 1(1) 166 LQSXW 6&. LQSXW W68 166 &3+$ &32/ &3+$ &32/ WZ 6&.+ WZ 6&./ WK 62 WY 62 WD 62 0,62 287387 06% 287 %,7 287 WU 6&. WI 6&. WGLV 62 /6% 287 WK 6, WVX 6, 026, ,1387 WK 166 WF 6&. 06% ,1 %,7 ,1 /6% ,1 DL E 1. Measurement points are done at 0.5VDD and with external CL = 30 pF. 96/138 Downloaded from Arrow.com.
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STM32F302x6 STM32F302x8 Electrical characteristics Figure 27. SPI timing diagram - master mode(1) +LJK 166 LQSXW 6&. 2XWSXW &3+$ &32/ 6&. 2XWSXW WF 6&. &3+$ &32/ &3+$ &32/ &3+$ &32/ WZ 6&.+ WZ 6&./ WVX 0, 0,62 ,13 87 WU 6&. WI 6&. %,7 ,1 06% ,1 /6% ,1 WK 0, 026, 287387 % , 7 287 06% 287 WY 02 /6% 287 WK 02 DL F 1. Measurement points are done at 0.5VDD and with external CL = 30 pF. Table 62.
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Electrical characteristics STM32F302x6 STM32F302x8 Table 62. I2S characteristics(1) (continued) Symbol Parameter Conditions tv(WS) WS valid time Master mode - 20 th(WS) WS hold time Master mode 2 - tsu(WS) WS setup time Slave mode 0 - th(WS) WS hold time Slave mode 4 - Master receiver 1 - Slave receiver 1 - Master receiver 8 - Slave receiver 2.
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STM32F302x6 STM32F302x8 Electrical characteristics Figure 28. I2S slave timing diagram (Philips protocol)(1) 1. Measurement points are done at 0.5VDD and with external CL=30 pF. 2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte. Figure 29. I2S master timing diagram (Philips protocol)(1) 1. Measurement points are done at 0.5VDD and with external CL=30 pF. 2. LSB transmit/receive of the previously transmitted byte.
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Electrical characteristics STM32F302x6 STM32F302x8 USB characteristics Table 63. USB startup time Symbol Parameter tSTARTUP(1) Max Unit 1 µs USB transceiver startup time 1. Guaranteed by design. Table 64. USB DC electrical characteristics Symbol Min.(1) Max.(1) Unit 3.0(3) 3.6 V I(USB_DP, USB_DM) 0.2 - Includes VDI range 0.8 2.5 1.3 2.
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STM32F302x6 STM32F302x8 Electrical characteristics Table 65. USB: Full-speed electrical characteristics(1) (continued) Symbol VCRS Parameter Conditions Output signal crossover voltage Output driver Z Impedance(3) DRV driving high and low Min Typ Max Unit 1.3 - 2.0 V 28 40 44 Ω 1. Guaranteed by design. 2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB Specification - Chapter 7 (version 2.0). 3.
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102/138 Downloaded from Arrow.com. DocID025147 Rev 7 Conversion voltage range External input impedance RAIN(1) Sampling rate fS(1) VAIN ADC clock frequency fADC External trigger frequency ADC current consumption (see Figure 31) IDDA fTRIG(1) Analog supply voltage for ADC Parameter - Resolution = 12 bits - - 0 - fADC = 72 MHz Resolution = 12 bits - 0.0175 Resolution = 6 bits, Fast Channel 0.012 Resolution = 10 bits, Fast Channel 0.014 0.
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Downloaded from Arrow.com. Trigger conversion latency Regular and injected channels without conversion abort Trigger conversion latency Injected channels aborting a regular conversion tlatr(1) tlatrinj(1) DocID025147 Rev 7 Total conversion time (including sampling time) Common mode input signal tCONV(1) CMIR(1) 1. Data guaranteed by design.
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Electrical characteristics STM32F302x6 STM32F302x8 Figure 31 illustrates the ADC current consumption as per the clock frequency in singleended and differential modes. $'& FXUUHQW FRQVXPSWLRQ $ Figure 31. ADC typical current consumption in single-ended and differential modes &ORFN IUHTXHQF\ 0636 06 9 Table 67. Maximum ADC RAIN (1) Resolution 12 bits 104/138 Downloaded from Arrow.com. Sampling cycle @ 72 MHz Sampling time [ns] @ 72 MHz 1.
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STM32F302x6 STM32F302x8 Electrical characteristics Table 67. Maximum ADC RAIN (1) (continued) Resolution Sampling cycle @ 72 MHz Sampling time [ns] @ 72 MHz 1.5 10 bits 8 bits 6 bits RAIN max (kΩ) Fast channels(2) Slow channels Other channels(3) 20.83 0.082 NA NA 2.5 34.72 0.270 0.082 0.100 4.5 62.50 0.560 0.390 0.330 7.5 104.17 1.20 0.82 0.68 19.5 270.83 3.30 2.70 2.20 61.5 854.17 10.0 8.2 6.8 181.5 2520.83 33.0 27.0 22.0 601.5 8354.17 100.0 82.0 68.0 1.
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Electrical characteristics STM32F302x6 STM32F302x8 Table 68. ADC accuracy - limited test conditions(1)(2) Symbol Parameter ET Single ended Total unadjusted error Differential Single ended EO Offset error Differential Single ended EG Gain error Differential ED EL ENOB (4) SINAD (4) 106/138 Downloaded from Arrow.com. Differential linearity error Integral linearity error Effective number of bits Signal-tonoise and distortion ratio Min Conditions ADC clock freq. ≤ 72 MHz Sampling freq.
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STM32F302x6 STM32F302x8 Electrical characteristics Table 68. ADC accuracy - limited test conditions(1)(2) (continued) Symbol Parameter Single ended SNR(4) THD(4) Signal-tonoise ratio Total harmonic distortion Min Conditions ADC clock freq. ≤ 72 MHz Sampling freq ≤ 5 Msps VDDA = 3.3 V 25°C Differential Single ended Differential Max (3) Typ Fast channel 5.1 Ms 66 67 - Slow channel 4.8 Ms 66 67 - Fast channel 5.1 Ms 69 70 - Slow channel 4.8 Ms 69 70 - Fast channel 5.
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Electrical characteristics l STM32F302x6 STM32F302x8 Table 69. ADC accuracy (1)(2)(3) Symbol Parameter ET Single ended Total unadjusted error Differential Single ended EO Offset error Differential Single ended EG Gain error Differential ED EL ENOB (5) SINAD (5) 108/138 Downloaded from Arrow.com. Differential linearity error Integral linearity error Effective number of bits Signal-tonoise and distortion ratio Min(4) Max Fast channel 5.1 Ms - ±6.5 Slow channel 4.8 Ms - ±6.
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STM32F302x6 STM32F302x8 Electrical characteristics Table 69. ADC accuracy (1)(2)(3) (continued) Symbol Parameter Single ended SNR(5) THD(5) Signal-tonoise ratio Total harmonic distortion Min(4) Max Fast channel 5.1 Ms 64 - Slow channel 4.8 Ms 64 - Fast channel 5.1 Ms 67 - Slow channel 4.8 Ms 67 - Fast channel 5.1 Ms - -75 Slow channel 4.8 Ms - -75 Fast channel 5.1 Ms - -79 Slow channel 4.8 Ms - -78 Conditions ADC clock freq. ≤ 72 MHz, Sampling freq ≤ 5 Msps, 2 V ≤ VDDA ≤ 3.
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Electrical characteristics STM32F302x6 STM32F302x8 Figure 32.
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STM32F302x6 STM32F302x8 6.3.19 Electrical characteristics DAC electrical specifications Table 71. DAC characteristics Symbol VDDA RLOAD(1) Parameter Conditions Min Typ Max Unit 2.4 - 3.6 V Connected to VSSA 5 - - kΩ Connected to VDDA 25 - - Analog supply voltage DAC output buffer ON Resistive load DAC output buffer ON Output impedance DAC output buffer ON - - 15 kΩ Capacitive load DAC output buffer ON - - 50 pF 0.2 - VDDA – 0.2 V DAC output buffer OFF - 0.
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Electrical characteristics STM32F302x6 STM32F302x8 Table 71. DAC characteristics (continued) Symbol Min Typ Max Unit CLOAD ≤50 pF, RLOAD ≥ 5 kΩ - - 1 MS/s Wakeup time from off state (Setting the ENx CLOAD ≤50 pF, tWAKEUP(3) bit in the DAC Control RLOAD ≥ 5 kΩ register) - 6.
PAGE 91
STM32F302x6 STM32F302x8 Electrical characteristics Table 72. Comparator characteristics(1)(2) (continued) Symbol tS_SC tSTART Parameter Min. Typ. Max. Unit - - 1(3) s - - 0.2 ms VDDA ≥ 2.7 V - - 4 VDDA < 2.7 V - - 10 Propagation delay for 200 mV step with 100 mV overdrive VDDA ≥ 2.7 V - 25 28 - 28 30 Propagation delay for full range step with 100 mV overdrive VDDA ≥ 2.
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Electrical characteristics 6.3.21 STM32F302x6 STM32F302x8 Operational amplifier characteristics Table 73. Operational amplifier characteristics(1) Symbol Parameter Condition Min Typ Max Unit VDDA Analog supply voltage - 2.4 - 3.6 V CMIR Common mode input range - 0 - VDDA V 25°C, No Load on output. - - 4 All voltage/Temp. - - 6 25°C, No Load on output. - - 1.6 All voltage/Temp.
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STM32F302x6 STM32F302x8 Electrical characteristics Table 73. Operational amplifier characteristics(1) (continued) Symbol PGA gain Rnetwork Parameter Condition PGA BW Vn Typ Max - 2 - - 4 - - 8 - - 16 - Gain=2 - 5.4/5.4 - Gain=4 - 16.2/5.4 - Gain=8 - 37.8/5.4 - Gain=16 - 40.5/2.7 - - -1% - 1% % - - - ±0.
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Electrical characteristics STM32F302x6 STM32F302x8 Figure 36. OPAMP Voltage Noise versus Frequency 116/138 Downloaded from Arrow.com.
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STM32F302x6 STM32F302x8 6.3.22 Electrical characteristics Temperature sensor characteristics Table 74. TS characteristics Symbol Parameter TL(1) Min Typ Max Unit - ±1 ±2 °C Average slope 4.0 4.3 4.6 mV/°C Voltage at 25 °C 1.34 1.43 1.52 V 4 - 10 µs 2.2 - - µs VSENSE linearity with temperature (1) Avg_Slope V25 tSTART(1) Startup time TS_temp(1)(2) ADC sampling time when reading the temperature 1. Guaranteed by design. 2.
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Package information 7 STM32F302x6 STM32F302x8 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 118/138 Downloaded from Arrow.com.
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STM32F302x6 STM32F302x8 7.1 Package information WLCSP49 package information Figure 37. WLCSP49 - 49-pin, 3.417 x 3.151 mm, 0.4 mm pitch wafer level chip scale package outline H EEE = ) $ EDOO ORFDWLRQ $ * 'HWDLO $ H ( H H $ ' $ $ %RWWRP YLHZ %XPS VLGH 6LGH YLHZ $ E %XPS )URQW YLHZ $ HHH = [ ( 1RWH $ 2ULHQWDWLRQ UHIHUHQFH 'HWDLO $ URWDWHG 6HDWLQJ SODQH 1RWH [ ' 7RS YLHZ :DIHU EDFN VLGH $ ;-B0(B9 1. Drawing is not to scale.
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Package information STM32F302x6 STM32F302x8 Table 77. WLCSP49 - 49-pin, 3.417 x 3.151 mm, 0.4 mm pitch wafer level chip scale package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.525 0.555 0.585 0.0207 0.0219 0.0230 A1 - 0.175 - - 0.0069 - A2 - 0.380 - - 0.0150 - - 0.025 - - 0.0010 - b(3) 0.220 0.250 0.280 0.0087 0.0098 0.0110 D 3.382 3.417 3.452 0.1331 0.1345 0.1359 E 3.116 3.151 3.186 0.1227 0.1241 0.1254 e - 0.
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STM32F302x6 STM32F302x8 Package information Table 78. WLCSP49 recommended PCB design rules (0.4 mm pitch) Dimension Recommended values Pitch 0.4 260 µm max. (circular) Dpad 220 µm recommended Dsm 300 µm min. (for 260 µm diameter pad) PCB pad design Non-solder mask defined via underbump allowed. Device marking The following figure gives an example of topside marking orientation versus ball A1 identifier location.
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Package information 7.2 STM32F302x6 STM32F302x8 LQFP64 package information Figure 40. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package outline PP *$8*( 3/$1( F $ $ $ 6($7,1* 3/$1( & $ FFF & ' ' ' . / / 3,1 ,'(17,),&$7,21 ( ( ( E H :B0(B9 1. Drawing is not to scale. Table 79. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package mechanical data inches(1) millimeters Symbol 122/138 Downloaded from Arrow.com.
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STM32F302x6 STM32F302x8 Package information Table 79. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package mechanical data (continued) inches(1) millimeters Symbol Min Typ Max Min Typ Max E3 - 7.500 - - 0.2953 - e - 0.500 - - 0.0197 - K 0° 3.5° 7° 0° 3.5° 7° L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - ccc - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 41.
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Package information STM32F302x6 STM32F302x8 Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 42. LQFP64 marking example (package top view) 5HYLVLRQ FRGH 3URGXFW LGHQWLILFDWLRQ 3 45. ' 3 5 'DWH FRGH : 88 3LQ LGHQWLILFDWLRQ 06 9 1.
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STM32F302x6 STM32F302x8 7.3 Package information LQFP48 package information Figure 43. LQFP48 - 48-pin, 7 x 7 mm low-profile quad flat package outline C ! ! ! 3%!4).' 0,!.% # MM '!5'% 0,!.% CCC # + ! $ $ , , $ 0). )$%.4)&)#!4)/. % % % B E "?-%?6 1. Drawing is not to scale. DocID025147 Rev 7 125/138 134 Downloaded from Arrow.com.
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Package information STM32F302x6 STM32F302x8 Table 80. LQFP48 - 48-pin, 7 x 7 mm low-profile quad flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 - - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 1.400 1.450 0.0531 0.0551 0.0571 b 0.170 0.220 0.270 0.0067 0.0087 0.0106 c 0.090 - 0.200 0.0035 - 0.0079 D 8.800 9.000 9.200 0.3465 0.3543 0.3622 D1 6.800 7.000 7.200 0.2677 0.2756 0.2835 D3 - 5.500 - - 0.
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STM32F302x6 STM32F302x8 Package information Figure 44. LQFP48 - 48-pin, 7 x 7 mm low-profile quad flat package recommended footprint AI D 1. Dimensions are expressed in millimeters. DocID025147 Rev 7 127/138 134 Downloaded from Arrow.com.
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Package information STM32F302x6 STM32F302x8 Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 45. LQFP48 marking example (package top view) 3URGXFW LGHQWLILFDWLRQ 45. ' $ 5 'DWH FRGH : 88 3LQ LGHQWLILFDWLRQ 5HYLVLRQ FRGH 3 06 9 1.
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STM32F302x6 STM32F302x8 7.4 Package information UFQFPN32 package information Figure 46. UFQFPN32 - 32-pin, 5x5 mm, 0.5 mm pitch ultra thin fine pitch quad flat package outline ' $ H $ $ ' GGG & & 6($7,1* 3/$1( E H ( E ( ( / 3,1 ,GHQWLILHU ' / ! " ?-%?6 1. Drawing is not to scale. 2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life. DocID025147 Rev 7 129/138 134 Downloaded from Arrow.com.
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Package information STM32F302x6 STM32F302x8 Table 81. UFQFPN32 - 32-pin, 5x5 mm, 0.5 mm pitch ultra thin fine pitch quad flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.500 0.550 0.600 0.0197 0.0217 0.0236 A1 0.000 0.020 0.050 0.0000 0.0008 0.0020 A3 - 0.152 - - 0.0060 - b 0.180 0.230 0.280 0.0071 0.0091 0.0110 D 4.900 5.000 5.100 0.1929 0.1969 0.2008 D1 3.400 3.500 3.600 0.1339 0.1378 0.1417 D2 3.400 3.500 3.600 0.
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STM32F302x6 STM32F302x8 Package information Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 48. UFQFPN32 marking example (package top view) 3URGXFW LGHQWLILFDWLRQ ' , 'DWH FRGH : 88 3 5HYLVLRQ FRGH 3LQ LGHQWLILHU 06 9 1.
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Package information 7.5 STM32F302x6 STM32F302x8 Thermal characteristics The maximum chip junction temperature (TJmax) must never exceed the values given in Table 23: General operating conditions.
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STM32F302x6 STM32F302x8 7.5.2 Package information Selecting the product temperature range When ordering the microcontroller, the temperature range is specified in the ordering information scheme shown in Section 8: Ordering information. Each temperature range suffix corresponds to a specific guaranteed ambient temperature at maximum dissipation and, to a specific maximum junction temperature.
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Package information STM32F302x6 STM32F302x8 Example 2: High-temperature application Using the same rules, it is possible to address applications that run at high ambient temperatures with a low dissipation, as long as junction temperature TJ remains within the specified range. Assuming the following application conditions: Maximum ambient temperature TAmax = 115 °C (measured according to JESD51-2), IDDmax = 20 mA, VDD = 3.
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STM32F302x6 STM32F302x8 8 Ordering information Ordering information Table 83. Ordering information scheme Example: STM32 F 302 K 8 T 6 xxx Device family STM32 = ARM®-based 32-bit microcontroller Product type F = general-purpose Device subfamily 302 = STM32F302xx, 2.0 to 3.
PAGE 114
Revision history 9 STM32F302x6 STM32F302x8 Revision history Table 84. Document revision history Date Revision 10-Apr-2014 1 Initial release. 13-May-2014 2 Updated Table 13: STM32F302x6/8 pin definitions. Added the input voltage on Boot0 pin in Table 20: Voltage characteristics.
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STM32F302x6 STM32F302x8 Revision history Table 84. Document revision history (continued) Date 04-Jun-2015 22-Jul-2016 06-Jun-2017 Revision Changes 5 Updated: – AF9 value for PA1, PA3 and PA9 in Table 14: Alternate functions for Port A, – the structure of Section 7: Package information.
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STM32F302x6 STM32F302x8 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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