Datasheet

DocID16554 Rev 4 89/136
STM32F103xF, STM32F103xG Electrical characteristics
132
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC
61967-2 standard which specifies the test board and the pin loading.
5.3.12 Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 45. EMI characteristics
Symbol Parameter Conditions
Monitored
frequency band
Max vs. [f
HSE
/f
HCLK
]
Unit
8/48 MHz 8/72 MHz
S
EMI
Peak level
V
DD
= 3.3 V, T
A
= 25 °C,
LQFP144 package
compliant with IEC
61967-2
0.1 to 30 MHz 8 12
dBµV30 to 130 MHz 31 21
130 MHz to 1GHz 28 33
SAE EMI Level 4 4 -
Table 46. ESD absolute maximum ratings
Symbol Ratings Conditions Class
Maximum
value
(1)
1. Guaranteed by characterization results, not tested in production.
Unit
V
ESD(HBM)
Electrostatic discharge
voltage (human body model)
T
A
= +25 °C, conforming
to JESD22-A114
22000
V
V
ESD(CDM)
Electrostatic discharge
voltage (charge device
model)
T
A
= +25 °C, conforming
to JESD22-C101
III 500
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